Related papers: Stable, highly nonlinear amorphous silicon nanowir…
Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…
Intrinsic hydrogenated amorphous silicon films can provide outstanding surface passivation of crystalline silicon wafer surfaces. This quality of Intrinsic hydrogenated amorphous silicon makes it valuable in heterojunction with intrinsic…
When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…
Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…
We report on simulation results that shows optimum photon absorption by superconducting nanowires can happen at a fill-factor that is much less than 100%. We also present experimental results on high performance of our superconducting…
Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In…
Systematic exploration of amorphous ABC heterostructures revealed that nanoscale morphological modifications markedly improved their artificial bulk second-order susceptibility. These amorphous birefringent heterostructures were fabricated…
Silicon photonics lacks a second-order nonlinear optical response in general because the typical constituent materials are centro-symmetric and lack inversion symmetry, which prohibits second-order nonlinear processes such as second…
We carried out first-principles density functional theory calculations of hydrogen and oxygen adsorption and diffusion on subnanometer MoS nanowires. The nanowires are robust against adsorption of hydrogen. On the other hand, interaction…
We have investigated ultrafast carriers dynamics in crystalline silicon nano-pillars structure using a pump-probe reflectivity method with 800 nm, 150 fs laser pulses and fluence in the range of {17 - 170} mJ/cm^2. Dimensions of the…
We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1}…
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative.…
By using femtosecond laser pulses at a wavelength range from 720 to 780 nm, we have observed absorptive and refractive nonlinearities in a film of multi-walled carbon nanotubes grown mainly along the direction perpendicular to the surface…
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have…
A technique is demonstrated which efficiently transfers light between a tapered standard single-mode optical fiber and a high-Q, ultra-small mode volume, silicon photonic crystal resonant cavity. Cavity mode quality factors of 47000 are…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled…
Nonlinear photonic chips have enabled the generation and processing of signals using only light, with performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the…
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices…
Polycrystalline silicon core fibers (SCFs) fabricated via the molten core drawing (MCD) method are emerging as a flexible optoelectronic platform. Here, the optical transmission properties of MCD SCFs that have been tapered down to a few…