Related papers: Microstructured tunable two dimensional potential …
We study the transport properties of Dirac electrons across a two-dimensional normal metal-barrier-normal metal (NBN) interfaces in monolayer borophane. We analyse the transmission probability with variation of the width of the barrier…
Efficient and controlled charge transport in networks of semiconducting single-walled carbon nanotubes is the basis for their application in electronic devices, especially in field-effect transistors and thermoelectrics. The recent advances…
The recent experimental realization of two-dimensional (2D) transition metal nitrides (TMNs, e.g., Mo5N6, {\delta}-MoN, and W5N6) opens new opportunities for exploring their fundamental physical properties at the two-dimensional limit. In…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…
Supercurrent diodes are nonreciprocal electronic elements whose switching current depends on their flow direction. Recently, a variety of composite systems combining different materials and engineered asymmetric superconducting devices have…
I point out the similarity between the microtubule experiment reported by Priel et al [Biophys. J. 90, 4639 (2006)] and the ZnO nanowire experiment of Wang et al [Nanolett. 6, 2768 (2006)]. It is quite possible that MTs are similar to a…
We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $\delta$-layer of Mn, where the charge carriers are confined within a quantum well and…
The radial confining potential in a semiconductor nanowire plays a key role in determining its quantum transport properties. Previous reports have shown that an axial magnetic field induces flux-periodic conductance oscillations when the…
Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matter interactions. However, most of light-controlled phenomena…
Tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary from non-polar to…
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer…
We probed the charge transfer interaction between the amine-containing molecules: hydrazine, polyaniline and aminobutyl phosphonic acid, and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to…
The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic…
Transition metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In Tungsten-based TMDs, spin and…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…
The two-dimensional character and reduced screening in monolayer transition-metal dichalcogenides (TMDs) lead to the ubiquitous formation of robust excitons with binding energies orders of magnitude larger than in bulk semiconductors.…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
Heterostructures of topological insulator Bi$_2$Se$_3$ on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…