Related papers: Advancing CMOS with Carbon Electronics
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
We simulate quantum transport between a graphene nanoribbon (GNR) and a single-walled carbon nanotube (CNT) where electrons traverse vacuum gap between them. The GNR covers CNT over a nanoscale region while their relative rotation is 90…
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…
Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce…
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…
We perform systematic numerical simulations for carbon nanotube (CNT) film microstrip antennas to fabricate flexible and durable applications in terms of various device design parameters. The selection of appropriate materials for…
Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon heterostructures that have a unique interface between a CNT and…
Molecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off…
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs,…
Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…
Carbon nanotubes (CNT) belong to the most promising new materials which can in the near future revolutionize the conventional electronics. When sandwiched between ferromagnetic electrodes, the CNT behaves like a spacer in conventional…
A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examined in the ballistic limit. The impact of quantum effects on…
Carbon Nanotubes have shown to be an attractive option in the race to find a replacement to silicon-based transistors, due to its high electrical conductivity, extraordinary mechanical strength, and thermal conductivity. However, challenges…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…