Related papers: Comparison of porous silicon prepared using metal-…
A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…
Porosification of silicon (Si) by metal induced etching (MIE) process have been studies here to understand the etching mechanism. The etching mechanism has been discussed on the basis of electron transfer from Si to metal ion (Ag$^+$) and…
Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 ohm.cm and 0.02 ohm.cm) in hydrofluoric (HF) acid of 24.5 precent…
Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We have analyzed the structure of solid, rough and porous nanowire surfaces of boron-doped silicon substrates with resistivities of \rho >…
Pulsed-laser dry printing of noble-metal microrings with a tunable internal porous structure, which can be revealed via an ion-beam etching post-procedure, was demonstrated. Abundance and average size of the pores inside the microrings were…
Many biological materials exhibit a multiscale porosity with small, mostly nanoscale pores as well as large, macroscopic capillaries to simultaneously achieve optimized mass transport capabilities and lightweight structures with large inner…
We report on the structure and electrical characteristics of silicon nanowire arrays prepared by metal assisted chemical etching (MACE) method, investigated by cross-sectional scanning electron microscopy (SEM) and high resolution X-ray…
Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiOx shell on…
Porous silicon layers (PS) have been prepared in this work via Photoelectrochemical etching process (PEC) of n type silicon wafer of 0.8 ohm.cm resistivity in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times…
The article addresses the thermophysical properties of porous silicon (PS) samples produced through electrochemical (EC), metal-assisted chemical (MACE), and combined (MACE + EC) etching methods. The PS/MACE+EC sample's thermophysical…
Nanoscale control of optical dispersion is essential for applications ranging from miniaturized spectrometers to color printing, all of which demand broadband spectral tunability. However, the Kramers-Kronig relations impose a fundamental…
Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced…
High-index dielectric metasurfaces featuring Mie-type electric and magnetic resonances have been of a great interest in a variety of applications such as imaging, sensing, photovoltaics and others, which led to the necessity of an efficient…
In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were…
Vertically aligned silicon micro/nanowire arrays of different sizes have been synthesized by combining the modified metal-assisted chemical etching (MACE) and reactive ion etching (RIE) methods. This is a novel lithography-free method to…
Understanding the mechanical interplay between silicon anodes and their surrounding solid-electrolyte interphase (SEI) is essential to improve the next generation of lithium-ion batteries. We model and simulate a 2D elliptical silicon…
Conical nanopores in amorphous SiO$_{2}$ thin films fabricated using the ion track etching technique show promising potential for filtration, sensing and nanofluidic applications. The characterization of the pore morphology and size…
Small angle X-ray scattering (SAXS) was used to quantitatively study the morphology of aligned, mono-disperse conical etched ion tracks in thin films of amorphous silicon dioxide with aspect ratios of around 6:1, and in polycarbonate foils…
This study aims to relate the time-frequency patterns of acoustic emission (AE) and other multi-modal sensor data collected in a hybrid directed energy deposition (DED) process to the pore formations at high spatial (0.5 mm) and time (<…
Laser-induced forward transfer (LIFT) printing is a versatile technique to realize micro/nano-scale additive manufacturing of functional materials, including metals and semiconductors. However, the crystallization phenomena during LIFT…