Related papers: Spatially Resolving Valley Quantum Interference of…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most…
It has been over ten years since Kane's influential proposal for a silicon-based nuclear spin quantum computer using phosphorous donors. Since then, silicon-based architectures have been refined as the experimental challenges associated…
Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…
A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe…
The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
Semiconductor architectures hold promise for quantum information processing (QIP) applications due to their large industrial base and perceived scalability potential. Electron spins in silicon in particular may be an excellent architecture…
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…
We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…
The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…
Quantum gates between spin qubits can be implemented leveraging the natural Heisenberg exchange interaction between two electrons in contact with each other. This interaction is controllable by electrically tailoring the overlap between…
We develop a multi-valley effective mass theory for substitutional donors in silicon in an inhomogeneous environment. Valley-orbit coupling is treated perturbatively. We apply the theory to the Stark effect in Si:P. The method becomes more…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at…
Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…
Conventionally, perturbative and non-perturbative calculations are performed independently. In this paper, valleys in the configuration space in quantum mechanics are investigated as a way to treat them in a unified manner. All the known…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…