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Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…

Mesoscale and Nanoscale Physics · Physics 2018-09-05 J. Salfi , B. Voisin , A. Tankasala , J. Bocquel , M. Usman , M. Y. Simmons , L. C. L. Hollenberg , R. Rahman , S. Rogge

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…

Mesoscale and Nanoscale Physics · Physics 2021-05-25 B. Voisin , J. Bocquel , A. Tankasala , M. Usman , J. Salfi , R. Rahman , M. Y. Simmons , L. C. L. Hollenberg , S. Rogge

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic…

Mesoscale and Nanoscale Physics · Physics 2016-07-27 Péter Boross , Gábor Széchenyi , Dimitrie Culcer , András Pályi

We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite…

Mesoscale and Nanoscale Physics · Physics 2008-04-18 M. J. Calderon , Belita Koiller , S. Das Sarma

Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time $T_1$ affected as the electron is shuttled between the…

Mesoscale and Nanoscale Physics · Physics 2016-07-29 Péter Boross , Gábor Széchenyi , András Pályi

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

Mesoscale and Nanoscale Physics · Physics 2021-05-05 F. Borjans , X. Zhang , X. Mi , G. Cheng , N. Yao , C. A. C. Jackson , L. F. Edge , J. R. Petta

Donor spin in silicon have achieved record values of coherence times and single-qubit gate fidelities. The next stage of development involves demonstrating high-fidelity two-qubit logic gates, where the most natural coupling is the exchange…

Mesoscale and Nanoscale Physics · Physics 2021-08-11 Benjamin Joecker , Andrew D. Baczewski , John K. Gamble , Jarryd J. Pla , André Saraiva , Andrea Morello

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 S. Das Sarma , Rogerio de Sousa , Xuedong Hu , Belita Koiller

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

Mesoscale and Nanoscale Physics · Physics 2022-01-25 Donovan Buterakos , Sankar Das Sarma

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…

Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements and long coherence times are firmly established, but progress on…

Mesoscale and Nanoscale Physics · Physics 2014-07-09 G. Pica , B. W. Lovett , R. N Bhatt , S. A. Lyon

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…

Mesoscale and Nanoscale Physics · Physics 2012-08-09 A. Baena , A. L. Saraiva , Belita Koiller , M. J. Calderón

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…

The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the…

Mesoscale and Nanoscale Physics · Physics 2021-07-05 Bilal Tariq , Xuedong Hu

Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency…

Quantum Physics · Physics 2026-05-14 Shihang Zhang , Guangchong Hu , Chunhui Zhang , Guanyong Wang , Tao Xin , Yu He , Peihao Huang

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…

Mesoscale and Nanoscale Physics · Physics 2014-10-30 Niklas Rohling , Maximilian Russ , Guido Burkard

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Materials Science · Physics 2009-11-10 Belita Koiller , R. B. Capaz , X. Hu , S. Das Sarma

Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…

Mesoscale and Nanoscale Physics · Physics 2024-01-12 Merritt P. Losert , M. A. Eriksson , Robert Joynt , Rajib Rahman , Giordano Scappucci , Susan N. Coppersmith , Mark Friesen

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

Materials Science · Physics 2007-05-23 Belita Koiller , Xuedong Hu , R. B. Capaz , A. S. Martins , S. Das Sarma
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