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Manganese-doped zinc sulfide nanocrystalline thin films were synthesized using a low-temperature chemical bath deposition and deposited on glass substrates for controlled durations using triethanolamine (TEA) as a complexing and capping…

Materials Science · Physics 2025-11-25 Himal Pokhrel , Urvashi Verma

Thin films of magnesium doped zinc oxide (MZO) were synthesized using the sol gel method and annealed at different temperatures under ambient condition. The morphological properties of the post annealed MZO films were investigated using X…

Materials Science · Physics 2019-09-09 Joydip Sengupta , Arifeen Ahmed , Rini Labar

The structural, optical and magnetic properties of the Zn1-xMnxO (0 < x < 0.05) thin films synthesized by sol-gel technique have been analyzed in the light of modification of the electronic structure and disorder developed in the samples…

Materials Science · Physics 2015-06-11 R. Karmakar , S. K. Neogi , Aritra Banerjee , S. Bandyopadhyay

In the present study, Mg-doped ZnO (MZO) nanofilms (NF) were grown by spray pyrolysis technique. X-ray diffraction (XRD) patterns have shown an intense peak oriented along (002) crystalline plane confirming crystalline origin of grown MZO…

In this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were…

A comparative study of the physical properties of undoped Zinc Oxide (ZnO) and Al doped Zinc Oxide (AZO) thin films were performed as a function of annealing temperature. The structural properties were analyzed using X-ray diffraction and…

Applied Physics · Physics 2019-09-06 Joydip Sengupta , R. K. Sahoo , C. D. Mukherjee

In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol-gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 {\deg}C…

Mesoscale and Nanoscale Physics · Physics 2014-12-30 F. Eskandari , M. Ranjbar , P. Kameli , H. Salamati

In this paper, Second-order NLO properties of ZnO and AZO thin films from experimental results are discussed. Measurements were a single wavelength of 1.064 micrometers using the standard rotational Maker fringes technique in a transmission…

Applied Physics · Physics 2023-04-28 Calford Odhiambo Otieno

The optical properties of lead zirconate titanate (PZT) thin films deposited on ZnO were studied by m-lines spectroscopy. In order to retrieve the refractive index and the thickness of both layers from the m-lines spectra, we develop a…

Materials Science · Physics 2015-10-26 T Schneider , D Leduc , J. Cardin , C Lupi , N Barreau , H Gundel

The magnetic domain structure of the multiferroic Bi1-xDyxFeO3 (BDFO) deposited on ZnO at the macroscopic level has been demonstrated in this paper. Magnetic properties are observed by saturated magnetic and ferroelectric hysteresis loops…

Mesoscale and Nanoscale Physics · Physics 2015-03-12 Deepak Bhatia , Himanshu Sharma , Seeraj Nawaj , R. S. Meena , C. V. Tomy , V. R Palkar

For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…

Materials Science · Physics 2013-02-01 Amit K. Das , P. Misra , R. S. Ajimsha , A. Bose , S. C. Joshi , D. M. Phase , L. M. Kukreja

An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any…

Materials Science · Physics 2016-08-31 V. Savchuk , B. Kotlyarchuk , M. Oszwaldowski

The study uses AACVD technology with nitrogen carrier gas to make AZO thin films through which it determines structural, optical, and morphological changes from 0 to 20 percent aluminum doping. The depositions took place at 400 degrees…

Ni-doped Cd1-xMnxS (x=0.4) thin films were prepared via a cost-effective chemical bath deposition (CBD) method to investigate their suitability for optoelectronic applications. Incorporation of a secondary transition metal such as Ni is…

Materials Science · Physics 2026-04-27 Himanshu Sharma Pathok , Padma Pani Shahu , Himanshu Kalita , Prasanta Kumar Saikia

Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was…

Thin films of polycrystalline $\beta$-Mn structure CoZn have been grown on thermally oxidized Si substrates by co-sputtering from elemental targets followed by annealing. A range of films grown with variable Co deposition power and fixed Zn…

Materials Science · Physics 2023-11-20 M. Dearg , G. Burnell , S. Langridge , C. H. Marrows

Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the…

Materials Science · Physics 2022-05-10 Yifan Yuan , Yuanyuan Ni , Xuanyuan Jiang , Yu Yun , Xiaoshan Xu

We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth…

Materials Science · Physics 2015-06-25 Shinobu Ohya , Kenichi Ohno , Masaaki Tanaka

Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600 $\bullet$ C. Two sample series with different oxygen partial pressures were studied.…

Materials Science · Physics 2025-03-03 Martin Mickan , Ulf Helmersson , David Horwat

The problem of detecting the ability of some metal oxides as photocatalysts is receiving considerable attention in the world. The studied zinc oxide is considered as one of the most utilized semiconductors, due to its direct band gap of…

Applied Physics · Physics 2018-06-19 Mohana F. Attia
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