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Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a…

Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance,…

Metastable superconductivity at \approx 50 K in the interfaces formed by metallic and oxidized magnesium (MgO) has been observed by ac magnetic susceptibility and electrical resistance measurements. The superconducting interfaces have been…

Superconductivity · Physics 2015-06-05 N. S. Sidorov , A. V. Palnichenko , O. M. Vyaselev

We report proximity effects of spin-orbit coupling in EuO$_{1-x}$ films capped with a Pt overlayer. Transport measurements suggest that current flows along a conducting channel at the interface between the Pt and EuO. The temperature…

Materials Science · Physics 2018-10-31 Gaurab Rimal , Jinke Tang

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel…

Materials Science · Physics 2010-12-21 S. G. Chigarev , E. M. Epshtein , I. V. Malikov , G. M. Mikhailov , P. E. Zilberman

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting…

Strongly Correlated Electrons · Physics 2009-10-31 Jonathan Z. Sun

MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the tunnel barrier. The breakdown is directly visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared…

Materials Science · Physics 2009-11-13 A. Thomas , V. Drewello , M. Schaefers , A. Weddemann , G. Reiss , G. Eilers , M. Muenzenberg , K. Thiel , M. Seibt

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…

$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…

Materials Science · Physics 2025-04-23 S. Di Napoli , A. Román , A. M. Llois , M. H. Aguirre , L. B. Steren , M. A. Barral

The interface structure of Fe/MgO(100) magnetic tunnel junctions predicted by density functional theory (DFT) depends significantly on the choice of exchange and correlation functional. Bader analysis reveals that structures obtained by…

Materials Science · Physics 2015-05-13 Xiaobing Feng , O. Bengone , M. Alouani , S. Lebégue , I. Rungger , S. Sanvito

We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness.…

Materials Science · Physics 2013-05-29 P. Bose , P. Zahn , J. Henk , I. Mertig

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully…

Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…

Materials Science · Physics 2025-04-23 Aloka Ranjan Sahoo , Sharat Chandra

Understanding the magnetic anisotropy at ferromagnetic metal/oxide interface is a fundamental and intriguing subject. Here we propose an approach to manipulate the strength of perpendicular magnetic anisotropy (PMA) by varying MgO thickness…

Materials Science · Physics 2014-12-05 T. Zhu , P. Chen , Q. H. Zhang , R. C. Yu , B. G. Liu

We present a computational study of the adhesive and structural properties of the Al/Al2O3 interfaces as building blocks of the Metal-Insulator-Metal (MIM) tunnel devices, where electron transport is accomplished via tunnelling mechanism…

Mesoscale and Nanoscale Physics · Physics 2018-05-09 M. Koberidze , M. J. Puska , R. M. Nieminen

The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions,…

Materials Science · Physics 2009-11-13 J. Schmalhorst , A. Thomas , G. Reiss , X. Kou , E. Arenholz

Interfacial reaction between iron and MgO has been studied in situ during deposition of iron on MgO surface, using soft x-ray absorption spectroscopy. High sensitivity of the technique which is capable of detecting even a sub monolayer of a…

Materials Science · Physics 2019-02-20 Pramod Vishwakarma , Mukul Gupta , D. M. Phase , Ajay Gupta

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…

Applied Physics · Physics 2023-09-19 Joydipto Bhattacharya , Ashima Rawat , Ranjit Pati , Aparna Chakrabarti , Ravindra Pandey

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in…