Related papers: Controlled epitaxial graphene growth within amorph…
We present energy filtered electron emission spectromicroscopy with spatial and wave-vector resolution on few layer epitaxial graphene on SiC$(000-1) grown by furnace annealing. Low energy electron microscopy shows that more than 80% of the…
As a two-dimensional material, graphene can be naturally obtained via epitaxial growth on a suitable substrate. Growth condition optimization usually requires an atomistic level understanding of the growth mechanism. In this article, we…
The synthesis of wafer-scale two-dimensional amorphous carbon monolayers has been recently demonstrated. This material presents useful properties when integrated as coating of metals, semiconductors or magnetic materials, such as enabling…
Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic…
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The…
The hexagonal structure of graphene gives rise to the property of gas impermeability, motivating its investigation for a new application: protection of semiconductor photocathodes in electron accelerators. These materials are extremely…
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction…
The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of…
The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at…
Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective…
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band…
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However,…
We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model…
Intercalation at the graphene/SiC interface provides a controlled route to stabilize atomically thin layers with properties distinct from their bulk counterparts. In this platform, the structure and stability of the intercalated phase…
In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first monolayer graphene domains was investigated by various…
The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications. Electron irradiation has demonstrated as an effective method for preparing novel quantum…
Two-dimensional (2D) magnetic materials integrated with graphene offer a compelling platform for next-generation spintronic devices, yet nickel in its 2D form remains largely unexplored, due to fundamental synthesis limitations. Here, we…
The vibrational properties of semiconducting graphene buffer layer epitaxially grown on hexagonal silicon carbide are determined using first-principles calculations on a realistic structural model. Despite the important chemical and…
The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at…
In view of the appreciable semiconducting gap of 0.26 eV observed in recent experiments, epitaxial graphene on a SiC substrate seems a promising channel material for FETs. Indeed, it is two-dimensional - and therefore does not require…