Related papers: Spin Transfer Torque Generated by the Topological …
Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large…
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
Three dimensional topological insulator bismuth selenide (Bi2Se3) is expected to possess strong spin-orbit coupling and spin-textured topological surface states, and thus exhibit a high charge to spin current conversion efficiency. We…
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…
We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different…
We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…
Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic topological protection (suppressing elastic backscattering)…
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron…
The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films,…
The spin-orbit torque induced by a topological insulator (TI) is theoretically examined for spin wave generation in a neighboring antiferromagnetic thin film. The investigation is based on the micromagnetic simulation of N\'{e}el vector…
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the…
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states…
Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin…
The topological insulator/ferromagnetic metal (TI/FMM) bilayer thin films emerged as promising topological surface state-based spintronic devices, most notably in their efficiency of current-induced spin torque. Using a cubic lattice model,…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…