Related papers: Development of large-area quadrant silicon detecto…
We are developing position sensitive silicon detectors (PSD) which have an electrode at each of four corners so that the incident position of a charged particle can be obtained using signals from the electrodes. It is expected that the…
Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of…
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency…
The timing measurement of charged particles using silicon detector is widely used in synchrotron source as X-ray detectors, in time-of-flight mass spectrometer and especially in large collider experiment. To reduce the drastically event…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…
The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in…
The extremely low dark current of silicon carbide (SiC) detectors, even after high-fluence irradiation, was utilized to develop a beam monitoring system for a wide range of particle rates, i.e., from the kHz to the GHz regime. The system is…
In the extreme environments of high-luminosity colliders, traditional planar silicon sensors suffer severe radiation-induced performance degradation and fail to satisfy the stringent demands of high-precision tracking and high-speed timing…
This article describes the design features and the first test measurements obtained during the installation of a novel high resolution 2D neutron detection technique. The technique proposed in this work consists of a boron layer (enriched…
The design, construction and test of a charged particle detector made of scintillation counters read by Silicon Photomultipliers (SiPM) is described. The detector, which operates in vacuum and is used as a veto counter in the NA62…
Plasma effect is observed in CCDs exposed to heavy ionizing alpha-particles with energies in the range 0.5 - 5.5 MeV. The results obtained for the size of the charge clusters reconstructed on the CCD pixels agrees with previous measurements…
In this LOI we propose a dedicated experiment that would detect "milli-charged" particles produced by pp collisions at LHC Point 5. The experiment would be installed during LS2 in the vestigial drainage gallery above UXC and would not…
A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
The Low-Gain Avalanche Diode (LGAD) is a new silicon detector and holds wide application prospects in particle physics experiments due to its excellent timing resolution. The LGAD with a pixel size of 1.3 mm $\times$ 1.3 mm was used to…
Future high-resolution imaging X-ray observatories may require detectors with both fine spatial resolution and high quantum efficiency at relatively high X-ray energies (>5keV). A silicon imaging detector meeting these requirements will…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests…
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based…