Related papers: Thickness Estimation of the Si Thin Films: a Simul…
In semiconductor manufacturing processes, silicon dioxide films are commonly used as barrier layers, insulating layers, and protective layers. Coherence scanning interferometry (CSI) offers thin film thickness measurements with a…
It is shown that for thin metallic films thickness of which does not exceed thickness of skin layer, the problem allows analytical solution. In the field of resonant frequencies the analysis of dependence of coefficients of transmission,…
It is shown that for thin metal films, thickness of which does not exceed a thickness of a skin-layer, the problem allows analytical solution for any boundary conditions. The analysis of transmission, reflection and absorption of an…
When the thickness of the layer is smaller than the electrons mean free path, the morphology affects the conductivity directly based on the layer thickness. This issue provides basis in order to estimate the thickness of the layer by…
The miniaturization of electronic devices has led to the prominence, in technological applications, of semiconductor thin films that are only a few nanometers thick. In spite of intense research, the thickness-dependent resistivity or…
Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized SiC(0001). The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite…
Diffraction of light beams from the phase steps due to the abrupt changes in the boundary of step leads to Fresnel fringes that their visibility and intensity profile depend on the change of the step height or light incident angle. The…
In this paper we report the development of a new method for the evaluation of thin films mass thickness and composition based on the Energy Dispersive X-Ray Spectroscopy (EDS). The method exploits the theoretical calculation of the in-depth…
10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device…
The results of computer simulation of the high-energy electrons passage through thin layers of titanium (Ti) and polyimide Kapton$^\circledR$ in the energy range from 3 to 20 MeV are presented. Simulation is carried out using the Geant4…
Grazing incidence x-ray scattering provides nanostructural information for thin film samples, but single images generally do not provide information on film thickness or the full complex index of refraction. Additionally, for thin films…
In a recently developed methodology termed photon induced near-field electron microscopy (PINEM), the inelastic scattering of electrons off illuminated nanostructures provides direct experimental access to the structure of optical…
We measured the local composition and thickness of SiO2-based glass material from diffraction. By using four dimensional scanning transmission electron microscopy (4D-STEM), we obtained diffraction at each scanning point. Comparing the…
In this work, we simulate the spectral emissivity of various stoichiometric crystal phases of Mo$_x$Si$_y$ compounds using density functional perturbation theory. The dielectric function, including electronic and ionic contributions, is…
In this paper, we introduce a novel artificial neural network (ANN) based scheme to estimate the thickness of thin films deposited on a given substrate. Here we consider the visible interference pattern between a plane wave and a diverging…
This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line equivalent circuit models were used for the cases of an…
For the first time it is shown that for thin metallic films thickness of which not exceed thickness of skin-layer, the problem allows analytical solution for arbitrary boundary value problems. The analysis of dependence of coefficients of…
We propose a model for predicting the fluctuations of electron states in thin films as function of film thickness. The model was derived based on the assumption of the existence of potential barrier fluctuations on the film surface. Since…
Electron diffraction through a thin patterned silicon membrane can be used to create complex spatial modulations in electron distributions by varying the intensity of different reflections using parameters such as crystallographic…
Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…