Related papers: Spin-Transfer-Torque Driven Magneto-Logic Gates Us…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…
Based on U-shaped plasmonic nanoholes in an $\ce{Au-VO2-Au}$ film, we propose to achieve several switchable functions at the telecom wavelength by transition from the $\ce{VO2}$ semiconductive state to the metallic state. The first is the…
Logic gates based on magnetic elements are promising candidates for the logic-in-memory applications with nonvolatile data retention, near-zero leakage and scalability. In such spin-based logic device, however, the multi-strip structure and…
We propose and numerically analyze novel reconfigurable logic gates using "single-electron spin transistors" (SESTs), which are single-electron transistors (SETs) with ferromagnetic electrodes and islands. The output characteristics of a…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free…
The prediction and realization of magnetic excitations driven by electrical currents via the spin transfer torque effect, enables novel magnetic nano-devices where spin-waves can be used to process and store information. The functional…
We predict the existence of a new metastable magnetization state in a single-domain nanomagnet with uniaxial shape anisotropy. It emerges when a spin-polarized current, delivering a spin-transfer-torque, is injected into the nanomagnet. It…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
We show by means of micromagnetic simulations that spin polarizer in nano-contact spin torque oscillators (NC-STOs) as the representative of the fixed layer in an orthogonal pseudo-spin valve (P-SV) can be employed to design and to control…
Using the complex stereographic variable representation for the macrospin, from a study of the nonlinear dynamics underlying the generalized Landau-Lifshitz(LL) equation with Gilbert damping, we show that the spin-transfer torque is…
We calculated the main dynamic parameters of the spin polarized current induced magnetic vortex oscillations in nanopillars, such as the range of current density, where a vortex steady oscillations exist, the oscillation frequency and orbit…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
We propose to use oscillating spin currents with slowly varying frequency (chirp) to manipulate and control the magnetization dynamics in a nanomagnet. By recasting the Landau-Lifshitz-Slonczewski equation in a quantum-like two-level…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
A device based on current-induced spin-orbit torque (SOT) that functions as an electronic neuron is proposed in this work. The SOT device implements an artificial neuron's thresholding (transfer) function. In the first step of a two-step…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Nanomagnetic logic has emerged as a potential replacement for traditional CMOS-based logic because of superior energy-efficiency. One implementation of nanomagnetic logic employs shape-anisotropic (e.g. elliptical) ferromagnets (with two…
We study the effects of spin transfer on thermally activated dynamics of magnetic nanopillars with identical thicknesses of the magnetic layers. The symmetric nanopillars exhibit anomalous dependencies of switching statistics on magnetic…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…