Related papers: Spin-Transfer-Torque Driven Magneto-Logic Gates Us…
Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…
Spin Hall effect converts charge current to spin current, which can exert spin-torque to switch the magnetization of a nanomagnet. Recently, it is shown that the ratio of spin current to charge current using spin Hall effect can be made…
A reconfigurable logic gate is proposed in a two-dimensional double quantum wire system with a coupling window enabled by a Rashba field. Manipulating the spin states of incoming electrons several quantum logic gates (OR, AND, XOR, CNOT)…
We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially localized current injected via a 10s-of-nm-diameter…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in…
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
Spin-transfer torque and current induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spin-transfer torque in the limit of…
Spin-transfer torque magnetoresistive random access memory is a potentially transformative technology in the non-volatile memory market. Its viability depends, in part, on one's ability to predictably induce or prevent switching; however,…
We study the application of one nanoring driven by a laser field in different states of polarization in logic circuits. In particular we show that assigning boolean values to different state of the incident laser field and to the emitted…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
By using the memristor's memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes…
Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
We discuss the design of the thermal analog of logic gates in systems made of a collection of nanoparticles. We demonstrate the possibility to perform NOT, OR, NOR, AND and NAND logical operations at submicrometric scale by controlling the…
The asymptotic behavior of switching time as a function of current for a uniaxial macrospin under the effects of both spin-torque and thermal noise is explored analytically by focusing on its diffusive energy space dynamics. The scaling…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
We propose the utilization of isotropic forward volume magneto-static spin waves in modern wave-based logic devices and suggest a concrete design for a spin-wave majority gate operating with these waves. We demonstrate by numerical…