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Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
$\mathrm{MoS_2}$ is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties are not yet fully understood. In particular, the nature of…
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…
Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…
Ab initio calculations of the electric polarization of correlation-driven insulating materials, namely Mott insulators, have not been possible so far. Using a combination of density functional theory and dynamical-mean-field theory we study…
We measure gate-tuned thermoelectric power of mechanically exfoliated Bi2Se3 thin films in the topological insulator regime. The sign of the thermoelectric power changes across the charge neutrality point as the majority carrier type…
Nd$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity…
Metamagnetism in antiferromagnets exhibits distinct critical behaviors and dynamics when invoking spin reversal and rotation. Here we show a 0.05% anisotropic strain suffices to in-situ modulate the metamagnetic critical field of the Mott…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility…
We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…
Here, we study the electrical transport and specific heat in 4$d$ based ferromagnetic material SrRuO$_3$ and its Ti substituted SrRu$_{1-x}$Ti$_x$O$_3$ series ($x$ $\le$ 0.7). The SrRuO$_3$ is a metal and shows itinerant ferromagnetism with…
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…
Topological insulators (TIs) constitute a new class of materials with unique properties resulting from the relativistic-like character and topological protection of their surface states. Theory predicts these to exhibit a rich variety of…
To examine the insulating mechanism of 5$d$ transition metal oxide Sr$_2$IrO$_4$, we study the ground state properties of a three-orbital Hubbard model with a large relativistic spin-orbit coupling on a square lattice. Using a variational…
The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are…
We have stabilized the {\alpha}-Fe1.6Ga0.4O3 (Ga doped {\alpha}-Fe2O3) system in rhombohedral structure. The system has shown magnetically canted ferromagnetic state and ferroelectric properties at room temperature. In first time, we…
We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…