Related papers: Structural and metal-insulator transitions in ioni…
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…
We report X-ray structural studies of the metal-insulator phase transition in bismuth ferrite, BiFeO3, both as a function of temperature and of pressure (931 oC at atmospheric pressure and ca. 45 GPa at ambient temperature). Based on the…
In correlated electronic systems, strong interactions and the interplay between different degrees of freedom may give rise to anomalous charge transport properties, which can be tuned by external parameters like temperature and magnetic…
The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
$Ab$ $initio$ calculations show the presence of a strong magnetoelectric interfacial coupling in CaMnO$_3$ ultra-thin film grown on a strained BaTiO$_3$ ferroelectric film. This heterostructure presents a polarization driven magnetic…
We report the structural and magnetic ground state properties of the monoclinic compound barium iridium oxide Ba$_4$Ir$_3$O$_{10}$ using a combination of resonant x-ray scattering, magnetometry, and thermodynamic techniques. Magnetic…
The effect of pressure on the low-temperature states of the Re3Ge7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature dependent resistance of Re3Ge7 behaves…
We present the structural, magnetic, thermal and ab-plane electronic transport properties of single crystals of CaCu1.7As2 grown by the self-flux technique that were investigated by powder x-ray diffraction, magnetic susceptibility chi,…
VO2, of interest for decades due to both its phenomenology and its potential applications, has a monoclinic distortion of the rutile crystal structure at ambient temperature that is coupled to its metal-insulator transition (MIT). In…
We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. M\"ossbauer spectroscopy, X-ray diffraction and electrical…
Anomalous low temperature electronic and structural behaviour has been discovered in PbRuO3. The structure (space group Pnma, a = 5.56314(1), b = 7.86468(1), c = 5.61430(1) A) and metallic conductivity at 290 K are similar to those of…
Applied magnetic field induces metal - insulator and re-entrant insulator-metal transitions in both graphite and rhombohedral bismuth. The corresponding transition boundaries plotted on the magnetic field - temperature (B - T) plane nearly…
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
Variations in the band structures of C60-polymers are studied, when pi-conjugation conditions are changed. We look at band structures in order to discuss a metal-insulator transition, using a semi-empirical model with the…
The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
We present a coordinated study of the paramagnetic-to-antiferromagnetic, rhombohedral-to-monoclinic, and metal-to-insulator transitions in thin-film specimens of the classic Mott insulator V$_2$O$_3$ using low-energy muon spin relaxation,…