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Related papers: An Exchange-Coupled Donor Molecule in Silicon

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We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

Materials Science · Physics 2012-01-17 Lukas Dreher , Felix Hoehne , Martin Stutzmann , Martin S. Brandt

Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip' is to use a quantum mediator, as has been demonstrated for…

Mesoscale and Nanoscale Physics · Physics 2016-10-11 T. A. Baart , T. Fujita , C. Reichl , W. Wegscheider , L. M. K. Vandersypen

The elementary CuO2 plane sustaining cuprate high-temperature superconductivity occurs typically at the base of a periodic array of edge-sharing CuO5 pyramids. Virtual transitions of electrons between adjacent planar Cu and O atoms,…

In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these…

Condensed Matter · Physics 2009-11-10 L. M. Kettle , H. S. Goan , Sean C. Smith , C. J. Wellard , L. C. L. Hollenberg , C. I. Pakes

Being a source of clean and renewable energy, the possibility to convert solar radiation in electric current with high efficiency is one of the most important topics of modern scientific research. Currently the exploitation of interaction…

Materials Science · Physics 2013-06-11 Marco Govoni , Ivan Marri , Stefano Ossicini

We develop an Over Barrier Model for computing charge exchange between ions and one-active-electron atoms at low impact energies. The main feature of the model is the treatment of the barrier crossing process by the electron within a…

Atomic Physics · Physics 2007-05-23 F. Sattin

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

Mesoscale and Nanoscale Physics · Physics 2009-04-28 W. H. Lim , H. Huebl , L. H. Willems van Beveren , S. Rubanov , P. G. Spizzirri , S. J. Angus , R. G. Clark , A. S. Dzurak

Hybrid structures formed between organic molecules and inorganic quantum dots can accomplish unique photophysical transformations by taking advantage of their disparate properties. The electronic coupling between these materials is…

Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the properties of acceptor bound holes, where spin-orbit…

Mesoscale and Nanoscale Physics · Physics 2020-01-31 J Salfi

Donor spin qubits in silicon offer one- and two-qubit gates with fidelities beyond 99%, coherence times exceeding 30 seconds, and compatibility with industrial manufacturing methods. This motivates the development of large-scale quantum…

4H silicon carbide (SiC) polytype is preferred over other SiC polytypes for high-power, high-voltage, and high-frequency applications due to its superior electrical, thermal, and structural characteristics. In this manuscript, we provide a…

Materials Science · Physics 2023-11-08 M. Holiatkina , A. Pöppl , E. Kalabukhova , J. Lančok , D. Savchenko

We have studied the electron hopping in a two-CdSe quantum dot system linked by an azobenzene-derived light-switching molecule. This system can be considered as a prototype of a QD supercrystal. Following the computational strategies given…

Materials Science · Physics 2014-03-17 Iek-Heng Chu , Jonathan Trinastic , Lin-Wang Wang , Hai-Ping Cheng

Recently there has been a great deal of interest on the possibility to exploit quantum-mechanical effects to increase the performance of energy storage systems. Here we introduce and solve a model of a quantum supercapacitor. This consists…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Dario Ferraro , Gian Marcello Andolina , Michele Campisi , Vittorio Pellegrini , Marco Polini

Donor-acceptor pairs (DAPs) in wide-bandgap semiconductors are promising platforms for the realization of quantum technologies, due to their optically controllable, long-range dipolar interactions. Specifically, Al-N DAPs in bulk silicon…

Computational Physics · Physics 2025-10-07 Anil Bilgin , Ian N. Hammock , Alexander A. High , Giulia Galli

A new phenomenon, called cooperative internal conversion process, in which the coupling of bound-free electron and neutron transitions due to the dipole term of their Coulomb interaction permits cooperation of two nuclei leading to neutron…

Nuclear Theory · Physics 2016-04-14 Péter Kálmán , Tamás Keszthelyi

Silicon-on-chip (SOI) photonic circuit is the most promising platform for scalable quantum information technology for its low loss, small footprint, CMOS-compatible and telecom communications techniques compatible. Multiple multiplexed…

In this work, the exchange energy J for a system of two laterally-coupled quantum dots, each one with an electron, is calculated analytically and in a detailed form, considering them as hydrogen-like atoms, under the Heitler-London…

Quantum Physics · Physics 2015-06-26 H. E. Caicedo-Ortiz , S. T. Perez-Merchancano

We realize a hybrid superconductor-semiconductor transmon device in which the Josephson effect is controlled by a gate-defined quantum dot in an InAs/Al nanowire. Microwave spectroscopy of the transmon's transition spectrum allows us to…

Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in…

Quantum Physics · Physics 2015-06-16 R. Guichard , S. J. Balian , G. Wolfowicz , P. A. Mortemousque , T. S. Monteiro

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 H. Sellier , G. P. Lansbergen , J. Caro , N. Collaert , I. Ferain , M. Jurczak , S. Biesemans , S. Rogge