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Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…

Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine…

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…

Bipolar thermoelectricity in tunnel junctions between superconductors of different energy gap has been recently predicted and experimentally demonstrated. This effect showed thermovoltages up to $\pm150\;\mu$V at milliKelvin temperatures.…

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…

A single atomic slice of {\alpha}-tin-stanene-has been predicted to host quantum spin Hall effect at room temperature, offering an ideal platform to study low-dimensional and topological physics. While recent research has intensively…

We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…

The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently…

In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have…

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…

In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…

This paper projects the enhanced drive current of a n-type electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET…

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…

The two-dimensional transition metal dichalcogenides (TMDs) have been proposed as candidates for the channel material in future field effect transistor designs. The heterophase design which utilizes the metallic T- or T' phase of the TMD as…

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…

In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…

Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These…

Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces.…