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Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong…
Atomically thin two-dimensional crystals have revolutionized materials science. In particular, monolayer transition metal dichalcogenides promise novel optoelectronic applications, due to their direct energy gaps in the optical range. Their…
The defect states in atomically thin layers of transition metal dichalcogenides are promising candidates for single photon emission. However, the brightness of such quantum emission is often weak, and is accompanied with undesirable effects…
The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $\Sigma$ valleys and the…
Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…
Conventional metals, in general, do not exhibit strong photoluminescence. 2H-TaSe$_2$ is a layered transition metal dichalcogenide that possesses metallic property with charge density wave characteristics. Here we show that 2H-TaSe$_2$…
Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal…
The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing…
Due to the absence of interlayer coupling and inversion symmetry, transition metal dichalcogenide (MX$_2$) semiconductor monolayers exhibit novel properties that are distinctly different from their bulk crystals such as direct optical band…
The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission…
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in…
Strain-engineered transition-metal dichalcogenide nanobubbles are promising platforms for quantum emission, as revealed by recent experimental observations. In this work, we present an \textit{ab initio} investigation of MoS$_2$, WS$_2$,…
Band gap tuning in two-dimensional transitional metal dichalcogenides (TMDs) is crucial in fabricating new optoelectronic devices. High resolution photoluminescence (PL) microscopy is needed for accurate band gap characterization. We…
In this work, we show how domain engineered lithium niobate can be used to selectively dope monolayer MoSe2 and WSe2 and demonstrate that these ferroelectric domains can significantly enhance or inhibit photoluminescence (PL) with the most…
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…
Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…
Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…
Two dimensional transition metal dichalcogenides exhibit strong excitonic responses, direct bandgaps, and remarkable nonlinear optical properties, making them highly attractive for integrated photonic, optoelectronic, and quantum…
The plasmon-mediated manipulation of light-matter interaction in two-dimensional atomically transition-metal dichalcogenides (TMDs) critically depends on the design of plasmonic nanostructures to achieve the maximum optical field in TMDs.…