Related papers: Liquid and back gate coupling effect: towards bios…
The electronic transport and the sensing performance of an individual SnO2 crossed nanowires device in a three-terminal field effect configuration were investigated using a combination of macroscopic transport measurements and Scanning…
Nanoplasmonics exploits the coupling between light and collective electron density oscillations (plasmons) to bypass the stringent limits imposed by diffraction. This coupling enables confinement of light to sub-wavelength volumes and is…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
Superconducting circuits are promising candidates for future computational architectures, however, practical applications require fast operation. Here, we demonstrate fast, gate-based switching of an Al nanowire-based superconducting switch…
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown by chemical transport, using iodine as a transport agent.…
We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak…
Superconducting qubits are a leading platform for scalable quantum computing and quantum error correction. One feature of this platform is the ability to perform projective measurements orders of magnitude more quickly than qubit…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
The unique ability of slot and sub-wavelength grating (SWG) waveguides to confine light outside of the waveguide core material has attracted significant interest in their application to chemical and biological sensing. However, high…
Silicon-based photonic biosensors, such as microring resonators and Mach-Zehnder interferometers, offer significant potential for the detection of analytes at low concentrations. To enhance response time and improve the limit of detection…
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…
Laboratory based searches for weakly-interacting slim particles (WISPs) of the light-shining-through-a-wall type (LSW) use visible or near-infrared (NIR) laser light. Low-noise and highly efficient detectors are necessary to improve over…
We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…