Related papers: Large enhancement in the generation efficiency of …
We study the effect of a pure spin current on the Kondo singlet in a diluted magnetic alloy using non-local lateral spin valve structures with highly spin polarized Co2FeSi electrodes. Temperature dependence of the non-local spin signals…
All-electrical methods for nucleating, detecting, and manipulating spin textures in two-dimensional (2D) van der Waals (vdW) magnets can serve as fundamental building blocks for multi-state spintronic memory, logic, and neuromorphic…
A charge flow through a magnetic tunnel junction (MTJ) leads to the generation of a spin-polarized current which exerts a spin-transfer torque (STT) on the magnetization. When the density of applied direct current exceeds some critical…
All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctions have been fabricated via mechanical exfoliation and stacking, and their magnetotransport properties are studied in detail. At low bias voltages large negative…
We consider thermoelectric transport properties of the edge states of a two dimensional topological insulator in a double quantum point contact geometry coupled to two thermally biased reservoirs. Both spin-preserving and spin-flipping…
Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…
A systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric…
We present theoretical predictions of spintronic transport phenomena that should be observable in ferromagnetic Fe nanocontacts bridged by chains of Fe atoms. We develop appropriate model Hamiltonians based on semi-empirical considerations…
Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient…
The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials --- semiconductors with unequal band gaps for each spin channel --- can generate spin-polarized…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal…
Magnetic Heusler materials with very low Gilbert damping are expected to show novel magnonic transport phenomena. We report nonlinear generation of higher harmonics leading to the emission of caustic spin-wave beams in a low-damping,…
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties…
The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin…
Magnetic and electronic transport properties of Co$_2$MnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range from 4.2 to 300 K, as well as field dependences of the Hall…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…