Related papers: Electron spin resonance and spin-valley physics in…
Electron shuttling is one of the current avenues being pursued to scale semiconductor quantum dot-based spin qubits. Adiabatic spin qubit transfer along a chain of tunnel-coupled quantum dots is one of the possible schemes. In this scheme,…
There is growing interest in bismuth-doped silicon (Si:Bi) as an alternative to the well-studied proposals for silicon based quantum information processing (QIP) using phosphorus-doped silicon (Si:P). We focus here on the implications of…
We study a two-electron quantum dot molecule in a magnetic field by the direct diagonalization of the Hamiltonian matrix. The ground states of the molecule with the total spin S=0 and S=1 provide a possible realization for a qubit of a…
Quantum dot arrays provide a promising platform for quantum information processing. For universal quantum simulation and computation, one central issue is to demonstrate the exhaustive controllability of quantum states. Here, we report the…
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical…
We report a measurement of the spin-echo decay of a single electron spin confined in a semiconductor quantum dot. When we tip the spin in the transverse plane via a magnetic field burst, it dephases in 37 ns due to the Larmor precession…
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin…
This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…
We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
Monolayer transition metal dichalcogenides (TMDs) offer a novel two-dimensional platform for semiconductor devices. One such application, whereby the added low dimensional crystal physics (i.e. optical spin selection rules) may prove TMDs a…
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states…
The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots…
Electron dynamics in quantum dots manifests itself in spin-flip spectra through electric dipole spin resonance (EDSR). Near a neutrality point separating two different singlet charged states of a double quantum dot, charge dynamics inside a…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
Scalable spin qubit devices will likely require long-range qubit interconnects. We propose to create such an interconnect with a resistive topgate. The topgate is positively biased, to form a channel between the two dots; an end-to-end…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…