Related papers: A first principles study of As doping at a disorde…
Doping and disorder are inseparable in the superconducting cuprates. Assuming the simplest possible disordered doping, we construct a semiphenomenological model and analyze its experimental consequences. Among the affected experimental…
The preferred location of boron and phosphorus in oxidized free-standing Si nanoparticles was investigated using a first-principles density functional approach. The calculated formation energies indicate that P should segregate to the…
Detailed understanding of the role of single dopant atoms in host materials has been crucial for the continuing miniaturization in the semiconductor industry as local charging and trapping of electrons can completely change the behaviour of…
Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…
An atomic array coupled to a photonic crystal waveguide forms a strongly coupled quantum interface, exhibiting various intriguing collective features of quantum dynamics. Here we consider a homogeneous atomic array and theoretically…
The dynamics and internal structure of doping fronts in organic semiconductors are investigated theoretically using an extended drift-diffusion model for ions, electrons and holes. The model also involves the injection barriers for…
To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…
We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining the transition density as a function of compensation, assuming that the transition is an Anderson localization…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
A dome-shaped phase diagram of superconducting critical temperature upon doping is often considered as a hallmark of unconventional superconductors. This behavior, observed in two-dimensional electron gases in $\mathrm{SrTiO}_3$-based…
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier…
The discovery of higher-temperature superconductivity in FeSe monolayers on SrTiO$_3$ (STO) substrates has sparked a surge of interest in the interface superconductivity. One point of the agreement reached to date is that modulation doping…
Charge redistribution at high-Tc superconductor interfaces and grain boundaries on the one hand is problematic for technological application. On the other hand, it gives rise to a great perspective for tailoring the local electronic states.…
We report the theoretical investigation of the disorder effects on the bulk states of inverted InAs/GaSb quantum wells. As disorder sources we consider the interface roughness and donors/acceptors supplied by intentional doping. We use a…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric…