Related papers: On the synthesis of Quantum Hall Array Resistance …
The quantum valley Hall effect (QVHE) has been observed in a variety of experimental setups, both quantum and classical. While extremely promising for applications, one should be reminded that QVHE is not an exact topological phenomenon and…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and…
The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials,…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
We present recent experimental results confirming previously predicted strong asymmetries of the current distribution in narrow Hall bars under the conditions of the integer quantum Hall effect (IQHE). Using a previously developed…
We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor…
Despite the extensive literature on the quantum Hall effect (QHE), a direct derivation of the phenomenological formula $\rho_{xy} = h/e^2\nu$ from first principles has remained elusive. In this work, we revisit the Landau and…
The longstanding problem of the Hall resistivity rho(x,y) in the Hall insulator phase is addressed using four-lead Chalker-Coddington networks. Electron interaction effects are introduced via a finite dephasing length. In the quantum…
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…
We present a theoretical framework to describe the integer quantum Hall effect (IQHE) in three-dimensional (3D) electron systems. This extends our previous single-electron approach, which was successfully applied to two-dimensional (2D)…
Evidence of both fractional and integer quantum hall effects (QHE) in three dimensional bulk replica opal (250nm diameter) structures of non-crystalline carbon are presented. In a remarkably soft quantum limit of ~ 40K temperature and about…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
We study the quantum Hall effect (QHE) in graphene based on the current injection model. In our model, the presence of disorder, the edge-state picture, extended states and localized states, which are believed to be indispensable…
Up to almost the last two decades all the experimental results concerning the quantum Hall effect (QHE), i.e., the observation of plateaux at integer (IQHE) or fractional (FQHE) values of the constant h/e2, were related to quantum-wells in…
This work introduces a pseudofractal analysis for optimizing high-resistance graphene-based quantized Hall array resistance standards (QHARS). The development of resistance standard device designs through star-mesh transformations is…
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external…
Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator…
There are compelling reasons to seek a new coherent description of the Quantum Hall Effects (QHE). The theories of the `Integer' (IQHE) and the `Fractional' (FQHE) quantum Hall effects are very different at present, despite their remarkable…
A microscopic calculation of the conductivity in the integer quantum Hall effect (IQHE) regime is carried out. The problem of precision of quantization is analyzed for samples of finite size. It is demonstrated that the precision of…