Related papers: Using Cache-coloring to Mitigate Inter-set Write V…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

The increasing use of Non-Volatile Memory (NVM) in computer architecture has brought about new challenges, one of which is the write endurance problem. Frequent writes to a particular cache cell in NVM can lead to degradation of the memory…

Last level caches (LLCs) occupy a large chip-area and there size is expected to grow further to offset the limitations of memory bandwidth and speed. Due to high leakage consumption of SRAM device, caches designed with SRAM consume large…

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high density, and fast read speed. The STT-RAM's small feature size is…

In this paper, we present a novel cache design based on Multi-Level Cell Spin-Transfer Torque RAM (MLC STTRAM) that can dynamically adapt the set capacity and associativity to use efficiently the full potential of MLC STTRAM. We exploit the…

The increased memory demands of workloads is putting high pressure on Last Level Caches (LLCs). Unfortunately, there is limited opportunity to increase the capacity of LLCs due to the area and power requirements of the underlying SRAM…

Non-volatile memory (NVM) technologies are interesting alternatives for building the on-chip Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but each write operation slightly…

Several emerging non-volatile (NV) memory technologies are rising as interesting alternatives to build the Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but write operations…

There has been a significant increase in leakage energy dissipation of CMOS circuits with each technology generation. Further, due to their large size, last level caches (LLCs) spend a large fraction of their energy in the form of leakage…

Last-Level Cache (LLC) represents the bulk of a modern CPU processor's transistor budget and is essential for application performance as LLC enables fast access to data in contrast to much slower main memory. However, applications with…

In order to meet the needs of high performance computing (HPC) in terms of large memory, high throughput and energy savings, the non-volatile memory (NVM) has been widely studied due to its salient features of high density, near-zero…

Last-level cache (LLC) partitioning is a technique to provide temporal isolation and low worst-case latency (WCL) bounds when cores access the shared LLC in multicore safety-critical systems. A typical approach to cache partitioning…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatility, near-zero leakage power, and immunity to radiation as…

As capacity and complexity of on-chip cache memory hierarchy increases, the service cost to the critical loads from Last Level Cache (LLC), which are frequently repeated, has become a major concern. The processor may stall for a…

Prices of NAND flash memories are falling drastically due to market growth and fabrication process mastering while research efforts from a technological point of view in terms of endurance and density are very active. NAND flash memories…

Current day processors employ multi-level cache hierarchy with one or two levels of private caches and a shared last-level cache (LLC). An efficient cache replacement policy at LLC is essential for reducing the off-chip memory transfer as…

Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…

Several emerging technologies for byte-addressable non-volatile memory (NVM) have been considered to replace DRAM as the main memory in computer systems during the last years. The disadvantage of a lower write endurance, compared to DRAM,…

Cache plays a critical role in reducing the performance gap between CPU and main memory. A modern multi-core CPU generally employs a multi-level hierarchy of caches, through which the most recently and frequently used data are maintained in…

Much research has shown that applications have variable runtime cache requirements. In the context of the increasingly popular Spin-Transfer Torque RAM (STT-RAM) cache, the retention time, which defines how long the cache can retain a cache…