Related papers: Using Cache-coloring to Mitigate Inter-set Write V…

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional…

The predictability of a system is the condition to give saferbound on worst case execution timeof real-time tasks which are running on it. Commercial off-the-shelf(COTS) processors are in-creasingly used in embedded systems and contain…

Relaxed retention (or volatile) spin-transfer torque RAM (STT-RAM) has been widely studied as a way to reduce STT-RAM's write energy and latency overheads. Given a relaxed retention time STT-RAM level one (L1) cache, we analyze the impacts…

Accurate simulation techniques are indispensable to efficiently propose new memory or architectural organizations. As implementing new hardware concepts in real systems is often not feasible, cycle-accurate simulators employed together with…

Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state…

Spin-Transfer Torque RAM (STTRAM) is promising for cache applications. However, it brings new data security issues that were absent in volatile memory counterparts such as Static RAM (SRAM) and embedded Dynamic RAM (eDRAM). This is…

Various constraints of Static Random Access Memory (SRAM) are leading to consider new memory technologies as candidates for building on-chip shared last-level caches (SLLCs). Spin-Transfer Torque RAM (STT-RAM) is currently postulated as the…

As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among emerging memory technologies, Spin-Transfer Torque Magnetic…

It is generally observed that the fraction of live lines in shared last-level caches (SLLC) is very small for chip multiprocessors (CMPs). This can be tackled using promotion-based replacement policies like re-reference interval prediction…

Spin Transfer Torque RAM (STTRAM) is a promising candidate for Last Level Cache (LLC) due to high endurance, high density and low leakage. One of the major disadvantages of STTRAM is high write latency and write current. Additionally, the…

Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…

Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAM in on-chip caches due to several advantages. These advantages include non-volatility, low leakage, high integration density, and CMOS compatibility. Prior studies have…

In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…

Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…

SRAM-based cache memory faces several scalability limitations in deep nanoscale technologies, e.g., high leakage current, low cell stability, and low density. Emerging Non-Volatile Memory (NVM) technologies have received lots of attention…

Spin-Transfer Torque Magnetic RAM (STT-MRAM) as one of the most promising replacements for SRAMs in on-chip cache memories benefits from higher density and scalability, near-zero leakage power, and non-volatility, but its reliability is…

In recent years, graph-processing has become an essential class of workloads with applications in a rapidly growing number of fields. Graph-processing typically uses large input sets, often in multi-gigabyte scale, and data-dependent graph…

High density Solid State Drives, such as QLC drives, offer increased storage capacity, but a magnitude lower Program and Erase (P/E) cycles, limiting their endurance and hence usability. We present the design and implementation of…

Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many…

Modern multicore processors are employing large last-level caches, for example Intel's E7-8800 processor uses 24MB L3 cache. Further, with each CMOS technology generation, leakage energy has been dramatically increasing and hence, leakage…