Related papers: Spin polarization, dephasing and photoinduced spin…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the…
We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and…
We perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-typed GaAs (100) quantum wells for high temperatures ($\geq 120$ K) under moderate magnetic fields in the Voigt configuration by constructing and…
Spin-echo instruments are typically used to measure diffusive processes and the dynamics and motion in samples on ps and ns timescales. A key aspect of the spin-echo technique is to determine the polarisation of a particle beam. We present…
Spintronic applications require an efficient injection of spin-polarized carriers. We study the maximally achievable spin polarization in InAs quantum dots in a vertical-cavity gain structure to be used in telecoms-wavelength…
We use time-resolved detection of the Hanle effect and polarized photoluminescence with dark intervals to investigate the buildup and decay of the spin polarization of nuclei interacting with donor-bound electrons in $n$-doped GaAs. Strong…
Circularly polarized photoluminescence (PL) spectroscopy measured at 19 K on GaAs/AlGaAs symmetric and asymmetric double quantum wells (DQW) is reported. The PL is obtained by exciting the sample with a circularly polarized (left or right)…
We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction…
We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and…
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low…
We have observed a large spin splitting between "spin" $+1$ and $-1$ heavy-hole excitons, having unbalanced populations, in undoped GaAs/AlAs quantum wells in the absence of any external magnetic field. Time-resolved photoluminescence…
We study the relaxation of a spin density injected into a two-dimensional electron system with generic spin-orbit interactions. Our model includes the Rashba as well as linear and cubic Dresselhaus terms. We explicitly derive a general…
We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
Spin dynamics of two-dimensional electrons in moderate in-plane electric fields is studied theoretically. The streaming regime is considered, where each electron accelerates until reaching the optical phonon energy, then it emits an optical…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…