Related papers: Planar graphene tunnel field-effect transistor
We study the tunneling of chiral electrons in graphene through a region where the electronic spectrum changes from the usual linear dispersion to a hyperbolic dispersion, due to the presence of a gap. It is shown that contrary to the…
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation.…
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…
In this work we describe a proposal for a graphene-based nanostructure that modulates electric current even in the absence of a gap in the band structure. The device consists of a graphene p-n junction that acts as a Veselago lens that…
We investigate theoretically the spin-independent tunneling magnetoresistance effect in a graphene monolayer modulated by two parallel ferromagnets deposited on a dielectric layer. For the parallel magnetization configuration, Klein…
We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple…
Electron beam exposure is a commonly used tool for fabricating and imaging graphene-based devices. Here we present a study of the effects of electron-beam irradiation on the electronic transport properties of graphene and the operation of…
The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover,…
We propose a novel ultrafast electronic switching device based on dual-graphene electron waveguides, in analogy to the optical dual-channel waveguide device. The design utilizes the principle of coherent quantum mechanical tunneling of Rabi…
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a…
We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal…
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a…
The tunneling effect of two-dimensional Dirac fermions in a constant magnetic field is studied. This can be done by using the continuity equation at some points to determine the corresponding reflexion and transmission coefficients. For…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
We report on the possibility for a spin valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin unrestricted Hubbard model, electronic band structures and conductance profiles are derived,…