Related papers: p-type doping in CVD grown MoS2 using Nb
LiNbO3 films doped with vanadium (V) were deposited using RF magnetron sputtering technique. To realize doping with a wider range of V concentration, a 30 mm V metal inlaid target asymmetrically embedded in the 150 mm lithium niobate target…
The potential application of the single-layer MoS2 as photocatalyst was revealed in this work based on first-principles calculations. It is found that the pristine single-layer MoS2 is a good candidate for photocatalyst, and its catalyzing…
We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements.…
Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we…
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si…
Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitutional doping concentration with large scale uniformity…
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we…
We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K).…
Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…
Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a…
Industrial upscaling frequently results in a different coating microstructure than the laboratory prototypes presented in the literature. Here, we investigate the wear behavior of physical vapor deposited (PVD) MoS2 coatings: A dense,…
Two-dimensional (2D) MoS$_2$ has been intensively investigated for its use in the fields of microelectronics, nanoelectronics, and optoelectronics. However, intrinsic 2D MoS$_2$ is usually used as the n-type semiconductor due to the…
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivity…
Modulating electronic structure of monolayer transition metal dichalcogenides (TMDCs) is important for many applications and doping is an effective way towards this goal, yet is challenging to control. Here we report the in-situ…
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm…
Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode.…
Low resistivity (~3-24 mOhm.cm) with tunable n- and p-type phase pure Cu2O thin films have been grown by pulsed laser deposition at 25-200 0C by varying the background oxygen partial pressure (O2pp). Capacitance data obtained by…