Related papers: p-type doping in CVD grown MoS2 using Nb
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent…
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping…
WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation…
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale…
We investigate the superconducting properties of molybdenum disulphide (MoS$_2$) monolayer across a broad doping range, successfully recreating the so far unresolved superconducting dome. Our first-principles findings reveal several…
We report hole and electron doping in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a…
Selective adsorptive capture and separation of chemically inert Kr and Xe noble gases with very low ppmv concentrations in air and industrial off-gases constitute an important technological challenge. Here, using a synergistic combination…
Doping in transition metal dichalcogenide (TMD) monolayers provides a powerful method to precisely tailor their electronic, optical, and catalytic properties for advanced technological applications, including optoelectronics, catalysis, and…
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type…
We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly auto-compensated doping is first characterized in…
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der…
In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is widely used as a transparent window/electrode in solar…
Nd$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity…
TiFe alloys are attractive compounds for solid-state stationary hydrogen storage. They can absorb hydrogen gas reversibly at near ambient temperatures and practical pressures with high volumetric capacities surpassing that of cryogenically…
In practical electronic applications, where doping is crucial to exploit large-area two-dimensional (2D) semiconductors, surface charge transfer doping (SCTD) has emerged as a promising strategy to tailor their electrical characteristics.…
Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical…
Molybdenum disulfide (MoS2) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality…
NbO2 is a potential material for nanometric memristor devices, both in the amorphous and the crystalline form. We fabricated NbO2 thin films using RF-magnetron sputtering from a stoichiometric target. The as-deposited films were amorphous…
BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite…