Related papers: Dead layer on silicon p-i-n diode charged-particle…
We consider current observational constraints on the electromagnetic charge of dark matter. The velocity dependence of the scattering cross-section through the photon gives rise to qualitatively different constraints than standard dark…
Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…
Inelastic dark matter (IDM) models feature an energy threshold for scattering with Standard Model particles, which enables their consistency with the increasingly stringent limits placed by direct detection experiments. In a typical…
We explore the discovery potential for long-lived particles at the 250-GeV ILC. The goal is to investigate possible gains of a dedicated far detector over the main detector ILD. For concreteness, we perform our study for sub-GeV axion-like…
Nickel-rich layered oxides have been widely used as positive electrode materials for high-energy-density lithium-ion batteries, but their degradation has severely affected cell performance, in particular at a high voltage and temperature.…
Low-threshold dark matter detectors, in particular cryogenic detectors based on dielectric materials, are among the best tools for probing sub-GeV dark matter masses. In the coming years detectors of this type will become sensitive to solar…
Recent studies in quantum computing have shown that quantum error correction with large numbers of physical qubits are limited by ionizing radiation from high-energy particles. Depending on the physical setup of the quantum processor, the…
We show that the rate for dark matter-electron scattering in an arbitrary material is determined by an experimentally measurable quantity, the complex dielectric function, for any dark matter interaction that couples to electron density.…
Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver…
The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were…
We propose a fundamental shift in the search for beyond the Standard Model long-lived particles (LLPs) at high-luminosity hadron colliders by prioritizing physical background suppression over traditional inner tracking. We introduce…
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting…
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot…
The longitudinal segmentation of shashlik calorimeters is challenged by dead zones and non-uniformities introduced by the light collection and readout system. This limitation can be overcome by direct fiber-photosensor coupling, avoiding…
We show that underground experiments like LUX/LZ, PandaX-II, XENON, and PICO could discover dark matter up to the Planck mass and beyond, with new searches for dark matter that scatters multiple times in these detectors. This opens up…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
A key strategy for the direct detection of sub-GeV dark matter is to search for small ionization signals. These can arise from dark matter-electron scattering or when the dark matter-nucleus scattering process is accompanied by a "Migdal"…
We introduce the fully-depleted charge-coupled device (CCD) as a particle detector. We demonstrate its low energy threshold operation, capable of detecting ionizing energy depositions in a single pixel down to 50 eVee. We present results of…
The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of a dielectric layer with different thickness leads to…