Related papers: Dead layer on silicon p-i-n diode charged-particle…
We propose the use of trapped ions for detection of millicharged dark matter. Millicharged particles will scatter off the ions, giving a signal either in individual events or in the overall heating rate of the ions. Ion traps have several…
In this work, we analyze dead layer comprising non-polar monoclinic (m) phase in $Hf_xZr_{1-x}O_2$ (HZO)-based ferroelectric (FE) material using first principles analysis. We show that with widely used tungsten (W) metal electrode, the…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
The high surface sensitivity and controlled surface charge state of submicron sized droplets is exploited to study low-energy electron transport through liquid interfaces using photoelectron imaging. Already a few charges on a droplet are…
In the HEP-experiments of High Luminosity upgrade of the Large Hadron Collider (HL-LHC), the application of isolation implants like $p$-stop between $n^+$-electrodes of position sensitive $n$-on-$p$ sensors has been typically considered to…
Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…
Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with…
Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe…
Modern scientific instruments operate under increasingly extreme constraints on bandwidth, latency, and power. Inference at the sensor edge determines experimental data collection efficiency by deciding which information to save for further…
In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…
The performance of a double sided silicon strip detector (DSSSD), used for position and energy detection of heavy ions, is reported. The analysis shows that the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD…
A novel detector for the ionization signal in a single phase LAr-TPC, based on the adoption of a multilayer Large Electron Multiplier (LEM) replacing the traditional anodic wire arrays, has been experimented in the ICARINO test facility at…
Within CERN RD50 Collaboration, MCz Si was identified as a best material for the detector used in the high luminosity collider experiments. The n in p Si detectors were utmost radiation hard detectors, which can be used for the phase 2…
When a nucleus in an atom undergoes a collision, there is a small probability to inelastically excite an electron as a result of the Migdal effect. In this Letter, we present a first complete derivation of the Migdal effect from dark…
A number of direct detection experiments are searching for electron excitations created by scattering of sub-GeV dark matter. We present an alternate formulation of dark matter-electron scattering in terms of the dielectric response of a…
When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…
Influence of the prolonged irradiation by fission products of 252Cf radionuclide on the operational parameters of silicon-lithium Si(Li) p-i-n detectors, Si surface barrier detectors and Si planar p+n detector was investigated. The obtained…