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The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
Single crystals of the organic charge-transfer salts $\alpha$-(BEDT-TTF)$_2M$Hg(SCN)$_4$ have been studied using Hall-potential measurements ($M=$K) and magnetization experiments ($M$ = K, Rb). The data show that two types of screening…
Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures.…
We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate…
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
The phenomenon of Quantum Tunneling of Mesoscopic Spins is reviewed in the light of the behavior of the archetype of these systems: the molecular complex Mn12-ac. Most observations can be understood in the framework of the reduced Hilbert…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
Metasurfaces composed of planar arrays of sub-wavelength artificial structures show promise for extraordinary light manipulation; they have yielded novel ultrathin optical components such as flat lenses, wave plates, holographic surfaces…
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length…
We present a framework for computing the gating properties of ligand-gated ion channel mutants using the Monod-Wyman-Changeux (MWC) model of allostery. We derive simple analytic formulas for key functional properties such as the leakiness,…
Practical design parameters of resonant metamaterials, such as loss tangent, are derived in terms of the quality factor $Q$ of the resonant effective medium permeability or permittivity. Through electromagnetic simulations of loop-based…
Metamaterials and metasurfaces are designed by periodically arranged subwavelength geometries, allowing a tailored manipulation of the electromagnetic response of matter. Here, we exploit temporal variations of permittivity inside…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
Energies and lifetimes are reported for the eight Br-like ions with 43 $\le$ Z $\le$ 50, namely Tc ~IX, Ru~X, Rh~XI, Pd~XII, Ag~XIII, Cd~XIV, In~XV, and Sn~XVI. Results are listed for the lowest 375 levels, which mostly belong to the…
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V…
Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…
Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this…
Water scarcity is a reality in our world, and scenarios predicted by leading scientists in this area indicate that it will worsen in the next decades. However, new technologies based in low-cost seawater desalination can prevent the worst…