Related papers: Single Photon Emission from Site-Controlled InGaN/…
High-quality sources of single photons are of paramount importance for quantum communication, sensing and metrology. To these ends, resonantly excited two-level systems based on self-assembled quantum dots have recently generated widespread…
Entanglement-based quantum key distribution promises enhanced robustness against eavesdropping and compatibility with future quantum networks. Among other sources, semiconductor quantum dots can generate polarization-entangled photon pairs…
We demonstrate tunable on-chip single photon sources using the Stark tuning of single quantum dot (QD) excitonic transitions in short photonic crystal waveguides (PhC WGs). The emission of single QDs can be tuned in real-time by 9 nm with…
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated…
We present measurements of the beta-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The beta-factor is evaluated by means of time-resolved…
Due to their quantum nature, single-photon emitters generate individual photons in bursts or streams. They are paramount in emerging quantum technologies such as quantum key distribution, quantum repeaters, and measurement-based quantum…
We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum…
A single photon source is realized with a cold atomic ensemble ($^{87}$Rb atoms). In the experiment, single photons, which is initially stored in an atomic quantum memory generated by Raman scattering of a laser pulse, can be emitted…
We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to…
Quantum emitters in solid-state crystals have recently attracted a lot of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key…
The visibility of two-photon interference is limited by the indistinguishability of the photons. In the cascaded emission of a three-level system, such as a single quantum dot, the indistinguishability of each photon in the pair is…
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth…
Single-photon sources based on neutral or charged excitons in a semiconductor quantum dot are attractive resources for photonic quantum computers and simulators. To obtain indistinguishable photons, the source is pumped on resonance with…
The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination…
Single-photon emitters are essential components for quantum communication systems, enabling applications such as secure quantum key distribution and the long-term vision of a quantum internet. Among various candidates, self-assembled…
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables…
We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to…
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The…
A two-level atom cannot emit more than one photon at a time. As early as the 1980s, this quantum feature was identified as a gateway to "single-photon sources", where a regular excitation sequence would create a stream of light particles…
A source of single photons and quantum entangled photon pairs is a key element in quantum information networks. Here, we demonstrate the electrically driven generation of quantum entangled pairs using a naturally symmetric GaAs quantum dot…