Related papers: Near-IR luminescence in bismuth-doped AgCl crystal…
Experimental and theoretical studies of spectral properties of crystalline TlCl:Bi are performed. Two broad near-infrared luminescence bands with a lifetime about 0.25 ms are observed: a strong band near 1.18 mkm excited by 0.40, 0.45, 0.70…
A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth…
Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$\mu$m range with a lifetime about 6~$\mu$s is…
First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and…
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…
Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and…
We observed an intensive near-infrared luminescence in Bi-doped KAlCl4 polycrystalline material. Luminescence dependence on the excitation wavelength and temperature of the sample was studied. Our experimental results allow asserting that…
First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO…
3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and…
We report new measurements of the near infrared (NIR) Xe$_2^*$ excimer fluorescence in an electron--beam--excited Ar (90%)--Xe (10 %) mixture at room temperature. Previous measurements up to a density $N\approx 2\times 10^{26}$ m$^{-3}$…
The near infrared (NIR) photoluminescence (PL) in Bismuth-doped aluminosilicate glasses was reported about of 16 years ago. Although it has since been developed various kinds of fiber lasers and amplifiers based on the Bismuth-doped silica…
The magnetic field induced circular polarization of near infrared photoluminescence in Bi-doped pure silica glass was studied in the spectral range of 660 - 1600 nm covering three excited state levels. The highest degree of magnetic…
We report data on the luminescence spectra associated with photochromic centers in X-ray irradiated calcium fluoride crystals doped with Lu ions. Irradiation in low energy photochromic centers absorption band excites emission, which can be…
IR luminescence and absorption in bismuth-doped silica glass-core fibers observed recently (see [arXiv:1106.2969v1 [physics.optics]) are argued to be caused by transitions in interstitial BiO molecules
The temperature dependences of optical loss and luminescence spectra have been measured in visible and NIR spectral range for Bi-doped silica and Bi-doped germanosilicate fibers for the first time. The temperature dependence of luminescence…
Absorption, luminescence and Raman spectra of interstitial bismuth atoms, $\mathrm{Bi}^{0}$, and negatively charged dimers, $\mathrm{Bi}^{2-}$, in alumosilicate, germanosilicate, phosphosilicate and phosphogermanate glasses networks are…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
Electron--impact excitation of Xe atoms in pure Xe gas and in a Xe(10 %)--Ar(90 %) mixture has led to the discovery of infrared (IR) luminescence of Xe$_{2}$ excimers. The investigation of the emission spectrum at low gas density has…
We have observed that C$_{60}^+$ ions isolated in cryogenic matrixes show pronounced near-IR photoluminescence upon excitation in the near-IR range. By contrast UV photoexcitation does not lead to measurable luminescence. After the recent…