Related papers: High Frequency top-down Junction-less Silicon Nano…
One of the challenges of nanoelectromechanical systems (NEMS) is the effective transduction of the tiny resonators. Vertical structures, such as nanomechanical pillar resonators, which are exploited in a wide range of fields, such as…
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin…
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic…
We demonstrate that the near-field thermal radiation between subwavelength SiC nanowires with square cross sections is dominated by multiple corner and edge resonances rather than the single surface-phonon-polariton channel of planar…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we…
We evaluate the performance of hybrid microwave resonators made by combining sputtered Nb thin films with Tungsten nanowires grown with a He-beam induced deposition technique. Depending on growth conditions the nanowires have a typical…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter…
At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent…
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled…
Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature.…
Phonon dispersions in <100> silicon nanowires (SiNW) are modeled using a Modified Valence Force Field (MVFF) method based on atomistic force constants. The model replicates the bulk Si phonon dispersion very well. In SiNWs, apart from four…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…
The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…
Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved…
We report a $^{23}$Na and $^{75}$As nuclear magnetic resonance (NMR) investigation of Na$_{x}$FeAs series ($x=1$, 0.9, 0.8) exhibiting a spin-density wave (SDW) order below $T_{\rm SDW}=45$, 50 and 43 K for $x=1$, 0.9, 0.8, respectively,…
Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report…
The influence of the channel shape in a junctionless silicon-on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…