Related papers: Weak Localization Effects as Evidence for Bulk Qua…
Quantum transport in magnetic topological insulators reveals the strong interplay between the magnetism and topology of electronic band structures. A recent experiment on magnetically doped topological insulator Bi2Se3 thin films showed the…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…
A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs).…
We grew single-crystal thin films of a topological crystalline insulator (TCI) SnTe with a smooth surface at the atomic scale by molecular beam epitaxy (MBE). In the magnetoresistance (MR) measurement, we observed both positive and negative…
Topological materials have attracted considerable experimental and theoretical attention. They exhibit strong spin-orbit coupling both in the band structure (intrinsic) and in the impurity potentials (extrinsic), although the latter is…
Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of…
We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous…
We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states,…
Bulk Bi2Te3 is known to be a topological insulator. We investigate surface states of Bi2Te3(111) thin films using density-functional theory including spin-orbit coupling. We construct a method to unambiguously identify surface states of…
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin…
One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other…
Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant…
To magnetize surfaces of topological insulators without damaging their topological feature is a crucial step for the realization of the quantum anomalous Hall effect (QAHE), and still remains as a challenging task. Through density…
We report transport studies on the layered van der Waals topological crystalline insulator Ta$_2$Pd$_3$Te$_5$. The temperature-dependent resistance at high temperature is dominated by a bulk insulating gap and tend to saturate at low…
We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon energy, we found…
In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…
Study of the dephasing in electronic systems is not only important for probing the nature of their ground states, but also crucial to harnessing the quantum coherence for information processing. In contrast to well-studied conventional…
We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…
With high quality topological insulator (TI) Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ~8 QL (QL:…