Related papers: Dilute ferromagnetic semiconductors: Physics and s…
Starting from microscopic and symmetry considerations, we derive the Hamiltonian describing the exchange interaction between the localized Mn spins and the valence band holes in $Ga_{1-x}Mn_x As$. We find that due to the strong spin-orbit…
Motivated by the ongoing interest in nitrides as materials for spintronics applications we have studied effects of doping with magnetic transition-metal elements (T=Cr,Mn,Fe,Co and Ni) on the electronic properties of semiconducting scandium…
We investigate the stability of the collinear ferromagnetic state in kinetic exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions >. Our results suggest that {\em noncollinear ferromagnetism} is commom to these…
The interplay of magnetic and semiconducting properties has been in the focus since more than a half of the century. In this introductory article we briefly review the key properties and functionalities of various magnetic semiconductor…
We report inelastic neutron scattering results on the spin dynamics in the 50 % hole-doped manganites, Pr{1/2}Sr{1/2}MnO3 and Nd{1/2}Sr{1/2}MnO3. In the paramagnetic phase, these systems exhibit a ridge-type diffuse scattering, indicating a…
A mean field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account: (i) strong spin-orbit and kp couplings in the…
Diluted magnetic semiconductors including Mn-doped GaAs are attractive for gate-controlled spintronics but Curie transition at room temperature with long-range ferromagnetic order is still debatable to date. Here, we report the…
Recent progress in understanding and controlling spintronic properties of (Ga,Mn)As and related compounds is contrasted to diverging experimental and theoretical results concerning the origin of high temperature ferromagnetism discovered in…
We review recently developed two-step approach for description of electronic and magnetic properties of a new class of materials, the diluted magnetic semiconductors. In the first step we construct, on the basis of the state-of-the-art…
The magnetic order, spin dynamics, and crystal structure of the multiferroic Sr0.56Ba0.44MnO3 have been investigated using neutron and x-ray scattering. Ferroelectricity develops at TC=305 K with a polarization of 4.2 microC/cm2 associated…
The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that…
The effect of the inclusion of As antisites in the diluted magnetic semiconductor (Ga,Mn)As is studied within density functional theory in the local spin density approximation. In the case of homogeneous distribution of Mn ions we find that…
A report of progress in spintronics-related works involving group III nitrides is given emphasizing contradictory opinions concerning basics characteristics of these materials. The actual position of magnetic impurities in the GaN lattice…
The continual model of the nonuniform magnetism in thin films and wires of a diluted magnetic semiconductor is considered with taking into account the finite spin polarization of carriers responsible for the indirect interaction of magnetic…
The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by…
During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In…
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the…
By means of density-functional simulations for half-doped manganites, such as pseudocubic Pr0.5Ca0.5MnO3 and bilayer PrCa2Mn2O7, we discuss the occurrence of ferroelectricity and we explore its crucial relation to the crystal structure and…
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used…