Related papers: Strain-controlled nonvolatile magnetization switch…
Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated…
We investigate the exchange bias and training effects in the FM/AF heterostructures using a unified Monte Carlo dynamical approach. This real dynamical method has been proved reliable and effective in simulating dynamical magnetization of…
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually…
The magnetic relaxation of ferromagnetic powders has been studied for many years, largely due to its importance to recording technologies. However, only recently have experiments been performed that resolve the magnetic state of individual…
Mutual control of the electricity and magnetism in terms of magnetic (H) and electric (E) fields, the magnetoelectric (ME) effect, offers versatile low power-consumption alternatives to current data storage, logic gate, and spintronic…
Magnetic materials have found wide application ranging from electronics and memories to medicine. Essential to these advances is the control of the magnetic order. To date, most room-temperature applications have a fixed magnetic moment…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
We report on the observation of a strain-induced insulator state in ferromagnetic La_0.7Sr_0.3CoO_3 films. Tensile strain above 1% is found to enhance the resistivity by several orders of magnitude. Reversible strain of 0.15% applied using…
The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties such as valence, spin, and orbital degrees of freedom as well as crystallographic geometry. Here, we demonstrate…
We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…
We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
The direct magnetoelectric (ME) effect mediated by lattice strains induced in a ferroelectric film by a ferromagnetic substrate is evaluated using first-principles-based calculations. To that end, the strain sensitivity of ferroelectric…
Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO$_3$ thin films through low-energy He…
Finite-temperature micromagnetics simulations are employed to study the magnetization-switching dynamics driven by a field applied at an angle to the long axis of an iron nanopillar. A bi-modal distribution in the switching times is…
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard…
Interfacing a ferromagnet with a polarized ferroelectric gate generates a non-uniform, interfacial spin density coupled to the ferroelectric polarization allowing so for an electric field control of effective transversal field to…