Related papers: High resolution coherent population trapping on a …
We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the…
Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of…
We report here on results of experimental-theoretical investigation of high-order harmonic generation (HHG) in layers of CdSe semiconductor quantum dots of different sizes and a reference bulk CdSe thin film. We observe a strong decrease in…
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
Visionary quantum photonic networks need transform-limited single photons on demand. Resonance fluorescence on a quantum dot provides the access to a solid-state single photon source, where the environment is unfortunately the source of…
Unexpected fluctuating charge field near a semiconductor quantum dot has severely limited the coherence time of the localized spin qubit. It is the interplay between the spin-orbit coupling and the asymmetrical confining potential in a…
Spins in semiconductor quantum dots are promising local quantum memories to generate polarization-encoded photonic cluster states, as proposed in the pioneering Rudolph-Lindner scheme [1]. However, harnessing the polarization degree of…
The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit…
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with…
The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in…
A heavy hole confined to an InGaAs quantum dot promises the union of a stable spin and optical coherence to form a near perfect, high-bandwidth spin-photon interface. Despite theoretical predictions and encouraging preliminary measurements,…
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise, phonons are intrinsic to the device and can hardly be…
Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth…
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light…
We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced…
We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we…
The possibility of coherent population trapping in two electron states with aligned spins (ortho-system) is evidenced. From the analysis of a three-level atomic system containing two electrons, and driven by the two laser fields needed for…
We study the case where phase modulation of the harmonic signal is used to obtain the error signal for the frequency stabilization to a reference atomic transition. High-frequency modulation, or analog of the Pound-Drever-Hall regime, is…