Related papers: Electron-electron scatttering in Sn-doped indium o…
Temperature dependent transport measurements on ultrathin antiferromagnetic Mn films reveal a heretofore unknown non-universal weak localization correction to the conductivity which extends to disorder strengths greater than 100 k$\Omega$…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the…
We have studied the electron-phonon (e-p) interaction in thin Cu and Au films at sub-Kelvin temperatures with the help of the hot electron effect, using symmetric normal metal-insulator-superconductor tunnel junction pairs as thermometers.…
We report on near normal infrared reflectivity spectra of ~550 nm thick films made of cosputtered transition metal nanograins and SiO2 in a wide range of metal fractions. Co0.85(SiO2)0.15,with conductivity well above the percolation…
We have systematically investigated the low-temperature electron dephasing times $\tau_\phi$ in more than 40 three-dimensional polycrystalline impure metals with distinct material characteristics. In all cases, a saturation of the dephasing…
Optimized DC magnetron sputtering system for the deposition of transparent conductive oxides (TCOs), such indium tin oxide (ITO) on glass substrate has been applied in order to achieve low-emitting (low-e) transparent coatings. To obtain…
Whilst it has long been known that disorder profoundly affects transport properties, recent measurements on a series of solid solution 3d-transition metal alloys reveal two orders of magnitude variations in the residual resistivity. Using…
Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…
Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored.…
Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…
We have measured the temperature dependence of the photoemission and x-ray absorption spectra of La$_{1-x}$Sr$_x$FeO$_3$ (LSFO) epitaxial thin films with $x=0.67$, where charge disproportionation ($3{Fe}^{3.67+}\to 2{Fe}^{3+}+ {Fe}^{5+}$)…
Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al0:35Ga0:65As heterostructure in dependence on temperature from 1.5 K to 30 K.…
Electron-electron scattering on the order of a few to tens of femtoseconds plays a crucial role in the ultrafast electron dynamics of conventional metals. When mid-infrared light is used for driving and the period of light field is…
We study the quasiparticle energy relaxation processes in superconducting Nb films of different thicknesses corresponding to different electron mean free paths in a state far from equilibrium, that is the highly dissipative flux-flow state…
We examine the effect on the DC resistivity of small-q electron-phonon scattering, in a system with the electronic topology of the high-T_c oxides. Despite the fact that the scattering is dominantly forward, its contribution to the…
The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where…
The temperature evolution of spin relaxation time, {\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and…
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects.…