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Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust read-out schemes must be explored. Here, we propose to…
Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementation of deep neural networks. A particularly exciting vision…
The persistent storage of big data requires advanced error correction schemes. The classical approach is to use error correcting codes (ECCs). This work studies an alternative approach, which uses the redundancy inherent in data itself for…
In the information explosion era, the demand for high-density stable storage technologies is soaring. Multi-dimensional optical storage with femtosecond laser writing offers a potential solution for massive data storage. However, equipment…
Training a deep neural network with noisy labels could reduce data annotation cost but may introduce noise into the learned model. In meta label correction approaches, an additional meta model besides the main model is trained with a small,…
High-capacity NAND flash memories use multi-level cells (MLCs) to store multiple bits per cell and achieve high storage densities. Higher densities cause increased raw bit error rates (BERs), which demand powerful error correcting codes.…
We investigate the problem of maintaining an encoded distributed storage system when some nodes contain adversarial errors. Using the error-correction capabilities that are built into the existing redundancy of the system, we propose a…
Humans excel at lifelong learning, as the brain has evolved to be robust to distribution shifts and noise in our ever-changing environment. Deep neural networks (DNNs), however, exhibit catastrophic forgetting and the learned…
Reducing the threshold voltage of electronic devices increases their sensitivity to electromagnetic radiation dramatically, increasing the probability of changing the memory cells' content. Designers mitigate failures using techniques such…
Despite their significant advantages over competing technologies, nanopore sequencers are plagued by high error rates, due to physical characteristics of the nanopore and inherent noise in the biological processes. It is thus paramount not…
Modern Deep Learning (DL) workloads are increasingly deployed in safety-critical domains, such as automotive systems and hyperscale data centers, where transient hardware faults pose a serious threat to system reliability. These workloads…
Disaggregated memory leverages recent technology advances in high-density, byte-addressable non-volatile memory and high-performance interconnects to provide a large memory pool shared across multiple compute nodes. Due to higher memory…
Several recent standards such as IEEE 802.11a/g, IEEE 802.16, and ECMA Multiband Orthogonal Frequency Division Multiplexing (MB-OFDM) for high data-rate Ultra-Wideband (UWB), employ bit-interleaved convolutionally-coded multicarrier…
Exponential growth in global computing demand is exacerbated due to the higher-energy requirements of conventional architectures, primarily due to energy-intensive data movement. In-memory computing with Resistive Random Access Memory…
Nanopore sequencing, superior to other sequencing technologies for DNA storage in multiple aspects, has recently attracted considerable attention. Its high error rates, however, demand thorough research on practical and efficient coding…
As memory technologies continue to shrink and memory error rates increase, the demand for stronger reliability becomes increasingly critical. Fine-grain memory replication has emerged as an appealing approach to improving memory fault…
The accelerating growth of global data generation demands data storage platforms that offer high capacity, long lifespan, and low energy consumption beyond the limits of electronic memory technologies. Optical storage provides an attractive…
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…
We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…
As DRAM scales to higher density and I/O speeds, ensuring data correctness becomes increasingly difficult. Industry has responded with a three-layer stack: on-die ECC (O-ECC), link ECC (L-ECC), and system ECC (S-ECC). However, these layers…