Related papers: Error Correction for NOR Memory Devices with Expon…

In order to achieve fault tolerance, highly reliable system often require the ability to detect errors as soon as they occur and prevent the speared of erroneous information throughout the system. Thus, the need for codes capable of…

Crossbar resistive memory with the 1 Selector 1 Resistor (1S1R) structure is attractive for nonvolatile, high-density, and low-latency storage-class memory applications. As technology scales down to the single-nm regime, the increasing…

This paper summarizes our work on characterizing application memory error vulnerability to optimize datacenter cost via Heterogeneous-Reliability Memory (HRM), which was published in DSN 2014, and examines the work's significance and future…

Regenerating codes are efficient methods for distributed storage in storage networks, where node failures are common. They guarantee low cost data reconstruction and repair through accessing only a predefined number of arbitrarily chosen…

Fault tolerance in Deep Neural Networks (DNNs) deployed on resource-constrained systems presents unique challenges for high-accuracy applications with strict timing requirements. Memory bit-flips can severely degrade DNN accuracy, while…

Efficient low complexity error correcting code(ECC) is considered as an effective technique for mitigation of multi-bit upset (MBU) in the configuration memory(CM)of static random access memory (SRAM) based Field Programmable Gate Array…

NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…

We consider a neural network (NN) that may experience memory faults and computational errors. In this paper, we propose a novel real-number-based error correction code (ECC) capable of detecting and correcting both memory errors and…

Chip Guard is a new approach to symbol-correcting error correction codes. It can be scaled to various data burst sizes and reliability levels. A specific version for DDR5 is described. It uses the usual DDR5 configuration of 8 data chips,…

Compared to planar (i.e., two-dimensional) NAND flash memory, 3D NAND flash memory uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip. This allows 3D NAND flash memory to increase storage density…

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high performance. Modern workloads such as Deep Neural Networks…

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…

In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…

Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…

We propose binary discrete parametric channel models for multi-level cell (MLC) flash memories that provide accurate ECC performance estimation by modeling the empirically observed error characteristics under program/erase (P/E) cycling…

We propose a lightweight scheme where the formation of a data block is changed in such a way that it can tolerate soft errors significantly better than the baseline. The key insight behind our work is that CNN weights are normalized between…

Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…

The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…

The last decade has witnessed the breakthrough of deep neural networks (DNNs) in many fields. With the increasing depth of DNNs, hundreds of millions of multiply-and-accumulate (MAC) operations need to be executed. To accelerate such…

Modern DRAM modules are often equipped with hardware error correction capabilities, especially for DRAM deployed in large-scale data centers, as process technology scaling has increased the susceptibility of these devices to errors. To…