Related papers: Resonant tunneling in graphene pseudomagnetic quan…
We analyze inelastic cotunneling through an interacting quantum dot subject to an ambient magnetic field in the weak tunneling regime under a non-adiabatic time-dependent bias-voltage. Our results clearly exhibit photon-assisted satellites…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…
We study resonant tunneling through a superconducting double barrier structure in graphene as a function of the system parameters. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a…
Keldysh nonequilibrium Green's function method is utilized to study theoretically the spin polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential…
The gap equation for Dirac quasiparticles in monolayer graphene in constant magnetic and pseudomagnetic fields, where the latter is due to strain, is studied in a low-energy effective model with contact interactions. Analyzing solutions of…
Marginally twisted bilayer graphene having small twist angles is predicted to exhibit unique structural and electronic properties, though experimental characterization remains limited. Using scanning tunneling microscopy, we investigate…
A unique attribute of atomically thin quantum materials is the in-situ tunability of their electronic band structure by externally controllable parameters like electrostatic doping, electric field, strain, electron interactions, and…
Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and…
Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…
We analyze tunneling-induced quantum fluctuations in a single-level quantum dot with arbitrarily strong onsite Coulomb interaction, generating cotunneling processes and renormalizing system parameters. For a perturbative analysis of these…
Quantum tunneling through an almost classical potential barrier can be strongly enhanced by a nonstationary field so that the penetration through the barrier becomes not exponentially small. This constitutes an extremely unusual phenomenon…
Magnetotransport of conventional semiconductor based double layer systems with barrier suppressed interlayer tunneling has been a rewarding subject due to the emergence of an interlayer coherent state that behaves as an excitonic…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field and develope a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
The problem of resonant transport of strongly interacting electrons through a one-dimensional single-level vibrating quantum dot is being considered. In this paper, we generalize the Komnik and Gogolin model [Phys. Rev. Lett., 90, 246403,…