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In situ Eu-doped {ZnCdO/ZnO}30 multilayer systems were grown on p-type Si-substrates and on quartz substrates by plasma-assisted molecular beam epitaxy. Various Eu concentrations in the samples were achieved by controlling temperature of…

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC…

In the process of molecular dynamics simulation studies of gold nanowires an interesting structure is discovered. This is a finite double-wall nanowire with a large empty core similar to single-wall and double-wall carbon nanotubes. The…

With a terahertz time-domain spectrometer (0.3 - 3.0 THz) we have measured the optical conductivity of the type-I clathrate Ba$_8$Ga$_{16}$Sn$_{30}$ at temperatures from 300 K down to 7 K. Independent six spectra superimposed on the Drude…

The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in…

Graded composition CdxZn1-xTe films were prepared by growing several alternate layers of CdTe and ZnTe by the Isothermal Close Space Sublimation technique. The thickness of both kinds of layers was modified along the structure to produce an…

Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family…

Monophasic and homogeneous Ni10Zr7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range…

A comprehensive photoluminescence and mechanoluminescence analysis of ZnS:Mn2+ nano-phosphor with zinc blende structure is presented. The sample containing quantum dot-sized nanocrystallites were synthesized by the chemical precipitation…

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to…

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass…

Highly efficient coupling of photons from nanoemitters into single-mode optical fibers is demonstrated using tapered fibers. 7.4 +/- 1.2 % of the total emitted photons from single CdSe/ZnS nanocrystals were coupled into a 300-nm-diameter…

In this study, we report the enhancement in field emission (FE) properties of ZnO nanostructure by Ni doping at the base pressure of ~1 x 10-8 mbar, which were grown by the simple wet chemical process. ZnO nanostructure shows single…

In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were designed by GaN droplet epitaxy and studied in-situ by X-ray…

Nanomechanical photonic metamaterials provide a wealth of active switching, nonlinear and enhanced light-matter interaction functionalities by coupling optically and mechanically resonant subsystems. Thermal (Brownian) motion of the…

GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…

We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices…

We report the growth of Al-catalysed ZnO nanowires (NWs) using a thermal evaporation technique.Before the growth, the substrates were covered with a distribution of Al nano-island that act as seeds. We found that the density of NWs…

The controlled modification of the electronic properties of ZnO nanorods via transition metal doping is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth…

We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically…