Related papers: Bipolar electrical switching in metal-metal contac…
This study explores the impact of organic cations in bismuth iodide complexes on their memristive behavior in metal-insulator-metal (MIM) type thin-layer devices. The presence of electron-donating and electron withdrawing functional groups…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to…
A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…
We suggest that highly conducting oriented polymers with a fibril structure can be modeled by a regular lattice of disordered metallic wires with a random first-neighbor interwire coupling which mimics the cross-links between fibrils. We…
VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^\circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow…
Vanadium dioxide (VO2) exhibits a hysteretic insulator-to-metal transition near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two-terminal bridge-like…
Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…
Fluorite ferroelectrics are exciting candidates for next-generation non-volatile memory devices because their unique ferroelectric mechanism, which arises from unconventional oxygen displacements, permits ferroelectricity with minimal…
Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal…
Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we…
The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the…
Our study demonstrates that strong cationic segregation can occur in amorphous complex oxide memristors during electrical operation. With the help of analytic techniques, we observed that switching the electrical stimulation from voltage to…
Correlated oxides, such as BiMnO$_3$ and LaMnO$_3$, show complex interplay of electronic correlations and crystal structure exhibiting multiple first order phase transitions, some without a clear order parameter. The quantitative…
Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their…
The electronic transport properties and the magnetic susceptibility were measured in detail in $YBaCo_2O_{5.45}$. Close to the so-called metal-insulator transition, strong effects of resistance relaxation, a clear thermal hysteresis and a…
Recent progress in the understanding of the collective behavior of electrons and ions have revealed new types of ferroic orders beyond ferroelectricity and ferromagnetism, such as the ferroaxial state. The latter retains only rotational…
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced…
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices are shown to exhibit stable threshold switching…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…