Related papers: Strain evolution in GaN Nanowires: from free-surfa…
The structural flexibility of low dimensional nanomaterials offers unique opportunities for studying the impact of strain on their physical properties and for developing innovative devices utilizing strain engineering. A key towards such…
Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile…
Coherent x-ray diffractive imaging is extended to high resolution strain analysis in crystalline nanostructured devices. The application potential is demonstrated by determining the strain distribution in (Ga,Mn)As/GaAs nanowires. By…
Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device,…
Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the bending of GaAs nanowires during the asymmetric overgrowth…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circular holes). A new process has been developed to improve the…
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial…
Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not…
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are…
Dynamically compressed materials in longitudinal waves are described by two physical models: hydrostatic pressure, with equal, normal, principal stresses or material uniaxially strained in the wave propagation direction. These models are…
Self-positioned nanomembranes such as rolled-up tubes and wrinkled thin films have been potential systems for a variety of applications and basic studies on elastic properties of nanometer-thick systems. Although there is a clear driving…
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space…
Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals…