Related papers: Fano resonance in Raman scattering of graphene
An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…
In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…
A Fano-like phonon resonance is observed in few-layer (~3) graphene at room temperature using infrared Fourier transform spectroscopy. This Fano resonance is the manifestation of a strong electron-phonon interaction between the discrete…
Since their discovery, graphene-based systems represent an exceptional playground to explore the emergence of peculiar quantum effects. The present paper focuses on the anomalous appearence of strong infrared phonon resonances in the…
Bound states and scattering resonances in the unoccupied continuum of a two-dimensional crystal predicted in [Phys$.$Rev$.$ B 87, 041405(R) (2013)] are considered within an exactly solvable model. A close connection of the observed…
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…
We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two…
Twisted bilayer graphene (tBLG) devices with ion gel gate dielectrics are studied using Raman spectroscopy in the twist angle regime where a resonantly enhanced G band can be observed. We observe prominent splitting and intensity quenching…
We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical…
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…
We present a computational study of the two-phonon Raman spectra of silicene and graphene within a density-functional non-orthogonal tight-binding model. Due to the presence of linear bands close to the Fermi energy in the electronic…
We report the observation of a Fano resonance between continuum Mie scattering and a narrow Bragg band in synthetic opal photonic crystals. The resonance leads to a transmission spectrum exhibiting a Bragg dip with an asymmetric profile,…
Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer…
The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be…
In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving…
We calculate the theoretical contribution to the doping and temperature ($T$) dependence of electrical resistivity due to scattering by acoustic phonons in Bernal bilayer graphene (BBG) and rhombohedral trilayer graphene (RTG). We focus on…
The effect of asymmetric functionally graded material on the edge resonance and the Fano resonance in semi-infinite FGM plates are reported in this work. The edge resonance is weakened by the material perturbation and the complete mode…
We report a Raman spectroscopy study of graphene field-effect transistors (GFET) with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back…
We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the…
We explore the Fano resonance in ZrTe5, using Raman scattering measurements. We identified two closely spaced B2g phonon modes, B2g I and B2g II, around 9 meV and 10 meV, respectively. Interestingly, only B2g I exhibited the Fano resonance,…