Related papers: The Dip Effect under Integer Quantized Hall Condit…
We present in this paper experimental results on the transport hysteresis in electron double quantum well structures. Exploring the measurement technique of fixing the magnetic field and sweeping a front gate voltage (Vg), we are able to…
The use of ultra-low temperature cooling and of high hydrostatic pressure techniques has significantly expanded our understanding of the two-dimensional electron gas confined to GaAs/AlGaAs structures. This chapter reviews a selected set of…
For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature…
Scaling properties of the quantum Hall metal-insulator transition are severely affected by finite size effects in small systems. Surprisingly, despite the narrow spatial range where probability structure functions exhibit multifractal…
We discuss the role of direct Coulomb interaction on the bulk insulator of the integer quantized Hall effect that bridges the topological insulators and the conductance quantization. We investigate the magneto-transport properties of a…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
The observation of the fractional quantum Hall (FQH) effect in 2D electron gases ushered in investigations of topological phases driven by strong electron correlations. Their remarkable features include fractionalized elementary…
Electron drag between two two-dimensional electron gases in magnetic fields has been observed with a polarity opposite that for zero field. This negative drag requires that the electrons have a hole-like dispersion. Density dependence…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau,…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated…
Dicke narrowing is a phenomena that dramatically reduces the Doppler width of spectral lines, due to frequent velocity-changing collisions. A similar phenomena occurs for electromagnetically induced transparency (EIT) resonances, and…
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature…
Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling…
The dynamical transport properties near the integer quantum Hall transition are investigated at zero temperature by means of the Dirac fermion approach. These properties have been studied experimentally at low frequency omega and low…