Related papers: Dynamic effects in double graphene-layer structure…
We analyze the dynamic operation of an optical modulator based on double graphene-layer(GL) structure utilizing the variation of the GL absorption due to the electrically controlled Pauli blocking effect. The developed device model yields…
We evaluate the effect of the recombination associated with interlayer transitions in ungated and gated double-graphene-layer (GL) structures on the injection of electrons and holes. Using the proposed model, we derive analytical…
Double layers (DLs) have been observed in a plasma reactor composed of a source chamber attached to a larger expanding chamber. Positive ion beams generated across the DL were characterized in the low plasma potential region using retarding…
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant…
We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in…
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…
We study the effect of population inversion associated with the electron and hole injection in graphene p-i-n structures at the room and slightly lower temperatures. It is assumed that the recombination and energy relaxation of electrons…
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage…
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride…
We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band…
The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable…
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5…
We study electromagnetic properties of a double layer graphene system in which electrons from one layer are coupled with holes from the other layer. The gauge invariant linear response functions are obtained. The frequency dependences of…
Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a…
We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…
Double-layers (DLs) were observed in the expanding region of an inductively coupled plasma with $\text{Ar}/\text{SF}\_6$ gas mixtures. No DL was observed in pure argon or $\text{SF}\_6$ fractions below few percent. They exist over a wide…
Resonant electronic transmission through graphene-based double barriers (wells) is studied as a function of the incident wave vector, the widths and heights (depths) of the barriers (wells), and the separation between them. Resonant…
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…
In this letter, we propose the resonant tunneling diode (RTD) based on a double-barrier graphene/boron nitride (BN) heterostructure as device suitable to take advantage of the elaboration of atomic sheets containing different domains of BN…
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium…